Silicon N Channel Power MOSFET Minos IRFP450 Featuring Low RDS ON and High Current Handling Capacity
Product Overview
The IRFP450 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide range of applications, offering low ON resistance and low reverse transfer capacitances. This MOSFET is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Origin: China (implied from contact information)
- Material: Silicon N-Channel
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
| VDS | VGS =0V, ID=250A | 500 | V | ||
| RDS(on) | VGS=10V, ID=6.5A | 0.32 | 0.38 | ||
| VGS(th) | VDS=VGS, ID=250A | 2.0 | 3.0 | 4.0 | V |
| IDSS | VDS=500V, VGS = 0V | 1.0 | A | ||
| IGSS(F) | VGS= +30V | 100 | nA | ||
| IGSS(R) | VGS = -30V | -100 | nA | ||
| Ciss | VGS=0V, VDS=25V, f=1.0MHZ | 2315 | pF | ||
| Coss | VGS=0V, VDS=25V, f=1.0MHZ | 190 | pF | ||
| Crss | VGS=0V, VDS=25V, f=1.0MHZ | 11 | pF | ||
| td(on) | VDD=250V,ID=13A, RG=10 | 28 | nS | ||
| tr | VDD=250V,ID=13A, RG=10 | 21 | nS | ||
| td(off) | VDD=250V,ID=13A, RG=10 | 62 | nS | ||
| tf | VDD=250V,ID=13A, RG=10 | 32 | nS | ||
| Qg | VDS=400V ID=13A VGS=10V | 40 | nC | ||
| Qgs | VDS=400V ID=13A VGS=10V | 9.2 | nC | ||
| Qgd | VDS=400V ID=13A VGS=10V | 14 | nC | ||
| ISD | S-D Current(Body Diode) | 13 | A | ||
| ISDM | Pulsed S-D Current(Body Diode) | 52 | A | ||
| VSD | VGS =0V, IDS=13A | 1.5 | V | ||
| trr | TJ=25,IF=13A di/dt=100A/us | 555 | nS | ||
| Qrr | TJ=25,IF=13A di/dt=100A/us | 4550 | C | ||
| RJC | Junction-to-case | 2.0 | /W |
2507181034_Minos-IRFP450_C22389972.pdf
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