Silicon N Channel Power MOSFET Minos IRFP450 Featuring Low RDS ON and High Current Handling Capacity

Key Attributes
Model Number: IRFP450
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-
RDS(on):
320mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
1 N-channel
Output Capacitance(Coss):
190pF
Input Capacitance(Ciss):
2.315nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
IRFP450
Package:
TO-247
Product Description

Product Overview

The IRFP450 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide range of applications, offering low ON resistance and low reverse transfer capacitances. This MOSFET is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: MNS (implied from www.mns-kx.com)
  • Origin: China (implied from contact information)
  • Material: Silicon N-Channel

Technical Specifications

ParameterTest ConditionsMinTypMaxUnit
VDSVGS =0V, ID=250A500V
RDS(on)VGS=10V, ID=6.5A0.320.38
VGS(th)VDS=VGS, ID=250A2.03.04.0V
IDSSVDS=500V, VGS = 0V1.0A
IGSS(F)VGS= +30V100nA
IGSS(R)VGS = -30V-100nA
CissVGS=0V, VDS=25V, f=1.0MHZ2315pF
CossVGS=0V, VDS=25V, f=1.0MHZ190pF
CrssVGS=0V, VDS=25V, f=1.0MHZ11pF
td(on)VDD=250V,ID=13A, RG=1028nS
trVDD=250V,ID=13A, RG=1021nS
td(off)VDD=250V,ID=13A, RG=1062nS
tfVDD=250V,ID=13A, RG=1032nS
QgVDS=400V ID=13A VGS=10V40nC
QgsVDS=400V ID=13A VGS=10V9.2nC
QgdVDS=400V ID=13A VGS=10V14nC
ISDS-D Current(Body Diode)13A
ISDMPulsed S-D Current(Body Diode)52A
VSDVGS =0V, IDS=13A1.5V
trrTJ=25,IF=13A di/dt=100A/us555nS
QrrTJ=25,IF=13A di/dt=100A/us4550C
RJCJunction-to-case2.0/W

2507181034_Minos-IRFP450_C22389972.pdf

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