Silicon N Channel Power MOSFET Minos MD40N25 Designed for SMPS and High Speed Switching Applications
Key Attributes
Model Number:
MD40N25
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
65mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
2.5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.7nF@25V
Pd - Power Dissipation:
310W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MD40N25
Package:
TO-247
Product Description
Product Description
The MD40N25 is a silicon N-Channel Enhanced Power MOSFET designed using advanced MOSFET technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal component for Switch Mode Power Supplies (SMPS), high-speed switching applications, and general-purpose electronic designs.
Product Attributes
- Brand: MNS (mns-kx.com)
- Material: Silicon N-Channel Enhanced MOSFET
- Certifications: RoHS product
- Package: TO-247
Technical Specifications
| Symbol | Parameter | Test Conditions | Units | Min. | Typ. | Max. |
| General Features | ||||||
| VDS | Drain-to-Source Voltage | V | 250 | |||
| RDS(ON) | On-Resistance | VGS=10V, ID=40A | m | 65 | 80 | |
| ID | Continuous Drain Current @ TC = 100 C | A | 26 | |||
| IDM | Pulsed Drain Current | (Note1) | A | 160 | ||
| VGS | Gate-to-Source Voltage | V | 30 | |||
| EAS | Single Pulse Avalanche Energy | (Note2) | mJ | 2000 | ||
| dv/dt | Peak Diode Recovery dv/dt | (Note3) | V/ns | 5.0 | ||
| PD | Power Dissipation | W | 310 | |||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 | 150 | |||
| OFF Characteristics | ||||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | V | 250 | -- | -- |
| IDSS | Drain to Source Leakage Current | VDS=250V, VGS= 0V, Tj = 25 | A | -- | -- | 1 |
| IDSS | Drain to Source Leakage Current | VDS=200V, VGS= 0V, Tj = 125 | A | -- | -- | 10 |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | nA | -- | -- | 100 |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | nA | -- | -- | -100 |
| ON Characteristics | ||||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V, ID=20A(Note4) | -- | 0.065 | 0.08 | |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250A(Note4) | V | 2.0 | -- | 4.0 |
| gfs | Forward Transconductance | VDS=40V, ID =20A(Note4) | S | -- | 27 | -- |
| Dynamic Characteristics | ||||||
| Rg | Gate resistance | f = 1.0MHz | -- | 1.8 | -- | |
| Ciss | Input Capacitance | VGS = 0V, VDS = 25V, f = | PF | -- | 3700 | -- |
| Coss | Output Capacitance | PF | -- | 360 | -- | |
| Crss | Reverse Transfer Capacitance | PF | -- | 2.5 | -- | |
| Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | ID =40A, VDD = 125V, VGS = 10V, RG =15 | ns | -- | 80 | -- |
| tr | Rise Time | ns | -- | 620 | -- | |
| td(OFF) | Turn-Off Delay Time | ns | -- | 140 | -- | |
| tf | Fall Time | ns | -- | 183 | -- | |
| Qg | Total Gate Charge | ID =40A, VDD =200V, VGS = 10V | nC | -- | 40 | -- |
| Qgs | Gate to Source Charge | nC | -- | 14 | -- | |
| Qgd | Gate to Drain (Miller)Charge | nC | -- | 11 | -- | |
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current (Body Diode) | TC=25 C | A | -- | -- | 40 |
| ISM | Maximum Pulsed Current (Body Diode) | A | -- | -- | 160 | |
| VSD | Diode Forward Voltage | IS=40A, VGS=0V(Note4) | V | -- | -- | 1.2 |
| Trr | Reverse Recovery Time | IS=40A, Tj = 25C, dIF/dt=100A/us, VGS=0V | ns | -- | 230 | -- |
| Qrr | Reverse Recovery Charge | nC | -- | 2150 | -- | |
2410122013_Minos-MD40N25_C5452763.pdf
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