Minos MDT08N06 60V N Channel MOSFET Featuring Low RDS ON and High Reliability for Power Applications
Key Attributes
Model Number:
MDT08N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
240pF
Number:
1 N-channel
Input Capacitance(Ciss):
3nF@30V
Pd - Power Dissipation:
107W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
MDT08N06
Package:
TO-252
Product Description
Product Overview
The MDT08N06 is a 60V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design and fully characterized avalanche performance contribute to its stability and reliability.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit | ||
| Electrical Characteristics @ Ta=25 | VDS | 60 | V | |||
| VGS | ±20 | V | ||||
| ID | 80 | A | ||||
| IDM | (Note 1) | 320 | A | |||
| PD | (Tc=25) | 107 | W | |||
| EAS | (Note 2) | 280 | mJ | |||
| TJ,TSTG | -55 To 175 | |||||
| Electrical Characteristics (TA=25unless otherwise noted) | BVDSS | VGS=0V, ID=250µA | 60 | V | ||
| IDSS | VDS=60V,VGS=0V | - | 1 | µA | ||
| IGSS | VGS=±20V,VDS=0V | - | ±100 | nA | ||
| VGS(th) | VDS=VGS,ID=250µA | 2 | 3 | 4 | V | |
| RDS(ON) | VGS=10V, ID=20A (Note 3) | - | 7 | 8 | mΩ | |
| gFS | VDS=10V,ID=20A | - | 25 | - | S | |
| Dynamic Characteristics | Clss | VDS=30V,VGS=0V, f=1.0MHz | - | 3000 | - | pF |
| Coss | - | 270 | - | pF | ||
| Crss | - | 240 | - | pF | ||
| Switching Characteristics (Note 4) | td(on) | VDD=30V, ID=30A, VGS=10V,RGEN=3Ω | - | 8.5 | - | nS |
| tr | - | 7 | - | nS | ||
| td(off) | - | 40 | - | nS | ||
| tf | - | 15 | - | nS | ||
| Total Gate Charge | Qg | VDS=48V,ID=40A, VGS=10V | - | 72 | - | nC |
| Qgs | - | 21.5 | - | nC | ||
| Qgd | - | 28 | - | nC | ||
| Drain-Source Diode Characteristics | VSD | VGS=0V,IS=80A | - | - | 1.2 | V |
| Thermal Characteristic | RθJ | Junction-to-Case | 1.4 | °C/W |
2410122013_Minos-MDT08N06_C5240687.pdf
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