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quality N Channel MOSFET MIRACLE POWER MSA004C with Low On Resistance and Halogen Free RoHS Compliant Design factory
quality N Channel MOSFET MIRACLE POWER MSA004C with Low On Resistance and Halogen Free RoHS Compliant Design factory

N Channel MOSFET MIRACLE POWER MSA004C with Low On Resistance and Halogen Free RoHS Compliant Design

Key Attributes
Model Number: MSA004C
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
173A
RDS(on):
4.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
27pF
Output Capacitance(Coss):
815pF
Input Capacitance(Ciss):
5.718nF
Pd - Power Dissipation:
312.5W
Gate Charge(Qg):
86nC@10V
Mfr. Part #:
MSA004C
Package:
TO-220
Product Description

Product Overview

The MSA004C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This MOSFET offers a high voltage rating of 110V and a continuous drain current of 173A at 25C, with a low on-resistance (RDS(on)) of 3.4m (typ.) at VGS = 10V. It features excellent RDS(on) and low gate charge, making it suitable for load switching, PWM applications, and power management. The device is 100% EAS guaranteed and is Halogen-free and RoHS-compliant.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Certifications: Halogen-free; RoHS-compliant

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
General Characteristics
Model MSA004C
VDS Drain-Source Voltage 110 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous (TC = 25C) 173 A
ID Drain Current-Continuous (TC = 100C) 108 A
IDM Drain Current-Pulsed 691 A
PD Maximum Power Dissipation (TC = 25C) 312.5 W
EAS Single Pulsed Avalanche Energy (L = 0.5mH, VDD = 25V, IAS = 58.5A, RG = 25, TJ = 25 ) 855 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.4 C/W
RJA Thermal Resistance, Junction to Ambient 70 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 110 - - V
IDSS Zero Gate Voltage Drain Current VDS = 110V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.0 - 4.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 20A - 3.4 4.4 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 2.2 -
Ciss Input Capacitance VDS = 55V, VGS = 0V, f = 1.0MHz - 5718 - pF
Coss Output Capacitance - 815 - pF
Crss Reverse Transfer Capacitance - 27 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 55V, VGS = 10V, ID = 20A, RGEN = 6.2 - 25 - ns
tr Turn-On Rise Time - 41 - ns
td(off) Turn-Off Delay Time - 67 - ns
tf Turn-Off Fall Time - 42 - ns
Qg Total Gate Charge VDS = 55V, VGS = 0 to 10V, ID = 20A - 86 - nC
Qgs Gate-Source Charge - 30 - nC
Qgd Gate-Drain Charge - 19 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 173 A
ISM Maximum Pulsed Current - - 691 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 82 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 223 - nC

2504151445_MIRACLE-POWER-MSA004C_C47361111.pdf

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