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quality High Frequency Soft Recovery Diode Minos MUR1560G-MNS 600V 15A Low IR Value and Epitaxial Chip Construction factory
quality High Frequency Soft Recovery Diode Minos MUR1560G-MNS 600V 15A Low IR Value and Epitaxial Chip Construction factory

High Frequency Soft Recovery Diode Minos MUR1560G-MNS 600V 15A Low IR Value and Epitaxial Chip Construction

Key Attributes
Model Number: MUR1560G-MNS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
135A
Reverse Leakage Current (Ir):
20uA
Reverse Recovery Time (trr):
35ns
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
1.6V@15A
Current - Rectified:
15A
Mfr. Part #:
MUR1560G-MNS
Package:
TO-220-2
Product Description

Product Description

The FRED Ultrafast Soft Recovery Diode, 600V, 15A is optimized for reduced losses and EMI/RFI in high-frequency power conditioning systems. Its soft recovery characteristic provides buffering in most applications, making it suitable for power converters and other applications where switching losses are not a significant portion of the total losses. Key advantages include ultrafast recovery, high-frequency operation, low IR value, and very low forward voltage, with an epitaxial chip construction.

Product Attributes

  • Brand: MNS-KX
  • Origin: Shenzhen Minos (implied from contact information)
  • Certifications: None explicitly mentioned
  • Material: Epitaxial chip construction
  • Color: Not specified

Technical Specifications

ParameterSymbolTest ConditionsValuesUnits
Absolute Maximum Ratings
Repetitive peak reverse voltageVRRM600V
Continuous forward currentIF(AV)TA=11015A
Single pulse forward currentIFSMTA=25135A
Maximum repetitive forward currentIFRMSquare wave, 20kHZ35A
Operating junction temperatureTj175
Storage temperaturesTstg-55 to +175
Electrical Characteristics
Breakdown voltageVBRVRIR=100A600V
Forward voltageVFIF=15 A1.30 - 1.60V
IF=15 A, Tj =1251.20 - 1.50V
Reverse leakage currentIRVR= VRRM20A
Tj=150, VR=600V200A
Reverse recovery timetrrIF=0.5A, IR=1A, IRR=0.25A35ns
IF=1A,VR=30V, di/dt =200A/us25 - 35ns
Thermal Characteristics
Junction-to-CaseRthJC2.8/W
Package Information
PackageTO-220-2

Notes

  • Exceeding the maximum ratings of the device may cause damage, even permanent failure, affecting machine dependability. Do not exceed absolute maximum ratings during circuit design.
  • When installing a heat sink, pay attention to torsional moment and smoothness.
  • MOSFETs are sensitive to static electricity; protect them from damage.
  • Shenzhen Minos reserves the right to make changes without prior notice.

2506121200_Minos-MUR1560G-MNS_C49108774.pdf

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