Soft Recovery Diode Minos MUR1660CT-MNS 600V 8A2 Designed for High Frequency Power Electronics Systems
Key Attributes
Model Number:
MUR1660CT-MNS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Leakage Current (Ir):
20uA
Reverse Recovery Time (trr):
35ns
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
1.3V@8A
Current - Rectified:
16A
Mfr. Part #:
MUR1660CT-MNS
Package:
TO-220
Product Description
Product Overview
The FRED Ultrafast Soft Recovery Diode (600V, 8A2) is engineered for high-frequency power conditioning systems, minimizing losses and EMI/RFI. Its soft recovery characteristic provides buffering in various applications, making it ideal for power converters and scenarios where switching losses are not a primary concern. Key features include ultrafast recovery, high operating junction temperature (175), high-frequency operation, low IR value, high surge capacity, and epitaxial chip construction.
Product Attributes
- Brand: MNS-KX (implied from www.mns-kx.com)
- Origin: Shenzhen, China (implied from contact information)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units | |
| Repetitive peak reverse voltage | VRRM | 600 | V | ||||
| Continuous forward current | IF(AV) | TA=110 | 16 | A | |||
| Single pulse forward current | IFSM | TA=25 | 100 | A | |||
| Maximum repetitive forward current | IFRM | Square wave, 20kHZ | 40 | A | |||
| Operating junction temperature | Tj | 175 | |||||
| Storage temperatures | Tstg | -55 | +175 | ||||
| Breakdown voltage / Blocking voltage | VBR | VR | IR=100A | 600 | V | ||
| Forward voltage | VF | IF=8 A | 1.30 | 1.60 | V | ||
| IF=8 A, Tj =125 | 1.20 | 1.50 | |||||
| Reverse leakage current | IR | VR= VRRM | 20 | A | |||
| Tj=150, VR=600V | 200 | ||||||
| Reverse recovery time | trr | IF=0.5A, IR=1A, IRR=0.25A | 35 | ns | |||
| IF=1A,VR=30V, di/dt =200A/us | 22 | 35 | |||||
| Junction-to-Case Thermal Resistance | RthJC | 3.0 | /W |
2506171712_Minos-MUR1660CT-MNS_C49108775.pdf
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