Surface Mounted Device PNP Resistor Equipped Transistor Nexperia PDTA144EU 115 for Digital Switching
Key Attributes
Model Number:
PDTA144EU,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
61kΩ
Resistor Ratio:
1.2
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA144EU,115
Package:
SOT-323
Product Description
Product Overview
The Nexperia PDTA144E series is a family of PNP resistor-equipped transistors (RETs) designed for surface-mounted device (SMD) applications. These transistors feature built-in bias resistors, reducing component count, simplifying circuit design, and lowering pick-and-place costs. They offer a 100 mA output current capability and are AEC-Q101 qualified, making them suitable for digital applications in the automotive and industrial segments. The PDTA144E series serves as a cost-saving alternative to BC847/857 series in digital applications, ideal for controlling IC inputs and switching loads.
Product Attributes
- Brand: Nexperia
- Type: PNP Resistor-Equipped Transistor (RET)
- Package Type: Surface-Mounted Device (SMD)
- Qualification: AEC-Q101 qualified
- Bias Resistors: R1 = 47 k, R2 = 47 k
Technical Specifications
| Model | Package | NPN Complement | Package Configuration | Output Current (IO) | Collector-Emitter Voltage (VCEO) | Bias Resistor R1 | Bias Resistor Ratio (R2/R1) |
|---|---|---|---|---|---|---|---|
| PDTA144EE | SOT416 (SC-75) | PDTC144EE | ultra small | -100 mA | -50 V | 33 k to 61 k (Typ 47 k) | 0.8 to 1.2 (Typ 1) |
| PDTA144EM | SOT883 (SC-101) | PDTC144EM | leadless ultra small | -100 mA | -50 V | 33 k to 61 k (Typ 47 k) | 0.8 to 1.2 (Typ 1) |
| PDTA144ET | SOT23 (TO-236AB) | PDTC144ET | small | -100 mA | -50 V | 33 k to 61 k (Typ 47 k) | 0.8 to 1.2 (Typ 1) |
| PDTA144EU | SOT323 (SC-70) | PDTC144EU | very small | -100 mA | -50 V | 33 k to 61 k (Typ 47 k) | 0.8 to 1.2 (Typ 1) |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | -50 | V |
| IO | Output current | - | - | - | -100 | mA |
| R1 | Bias resistor 1 (input) | - | 33 | 47 | 61 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | open emitter | - | - | -50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | -10 | V |
| VI | Input voltage | positive | - | - | +10 | V |
| VI | Input voltage | negative | - | - | -40 | V |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | -100 | mA |
| Ptot | Total power dissipation | Tamb 25 C PDTA144EE (SOT416) | - | - | 150 | mW |
| Ptot | Total power dissipation | Tamb 25 C PDTA144EM (SOT883) | - | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C PDTA144ET (SOT23) | - | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C PDTA144EU (SOT323) | - | - | 200 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | +150 | C |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | PDTA144EE (SOT416) | - | - | 830 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | PDTA144EM (SOT883) | - | - | 500 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | PDTA144ET (SOT23) | - | - | 500 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | PDTA144EU (SOT323) | - | - | 625 | K/W |
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A | - | - | -1 | A |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A; Tj = 150 C | - | - | -5 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -90 | A |
| hFE | DC current gain | VCE = -5 V; IC = -5 mA | 80 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -10 mA; IB = -0.5 mA | - | - | -150 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | - | -1.2 | -0.8 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -2 mA | -3 | -1.6 | - | V |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz | - | 180 | - | MHz |
2410121735_Nexperia-PDTA144EU-115_C454942.pdf
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