Power Switching N Channel MOSFET Minos MDT20N06 with Excellent Heat Dissipation and Low Gate Charge
Key Attributes
Model Number:
MDT20N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+175℃
RDS(on):
40mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1.3V
Reverse Transfer Capacitance (Crss@Vds):
66pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
670pF@25V
Pd - Power Dissipation:
44W
Gate Charge(Qg):
21nC@48V
Mfr. Part #:
MDT20N06
Package:
TO-252
Product Description
Product Description
The MDT20N06 is an N-Channel Power MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for a wide variety of applications, including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, high density cell design for ultra-low Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Package: TO-252
- Origin: Shenzhen, China (derived from contact information)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Drain Current-Continuous | ID | 20 | A | |||
| RDS(ON) | RDS(ON) | VGS=10V | 30 | 35 | m | |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 20 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 80 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 44 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 56 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Junction-to-Case | RJC | 3.4 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.0 | 1.8 | 2.4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=10A (Note 3) | -- | 30 | 35 | m |
| Forward Transconductance | GFS | VDS=5V,ID=10A | -- | 11 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, F=1.0MHz | -- | 670 | -- | pF |
| Output Capacitance | Coss | -- | 76 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 66 | -- | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V,ID=10A, VGS=10V,RGEN=10 (Note 4) | -- | 19.2 | -- | nS |
| Turn-on Rise Time | tr | -- | 6.4 | -- | nS | |
| Turn-Off Delay Time | td(off) | -- | 29.2 | -- | nS | |
| Turn-Off Fall Time | tf | -- | 8.2 | -- | nS | |
| Total Gate Charge | Qg | VDS=48V,ID=10A VGS=10V | -- | 21 | -- | nC |
| Gate-Source Charge | Qgs | -- | 5 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 6.5 | -- | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=20A (Note 3) | -- | -- | 1.2 | V |
| Reverse Recovery Time | Trr | Tj=25IF=10A di/dt=100A/uS note3 | -- | 33.6 | -- | ns |
| Reverse Recovery Charge | Qrr | -- | 32.1 | -- | nc | |
2508221629_Minos-MDT20N06_C5366135.pdf
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