Low On Resistance MOSFET MIRACLE POWER MS8001B Featuring 85V Drain Source Voltage and 120A Current
Key Attributes
Model Number:
MS8001B
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
120A
RDS(on):
5.3mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Output Capacitance(Coss):
637pF
Pd - Power Dissipation:
173.6W
Input Capacitance(Ciss):
4.021nF
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
MS8001B
Package:
TO-263
Product Description
Product Overview
The MS8001B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features high performance with an 85V drain-source voltage and 120A continuous drain current. This MOSFET offers low on-resistance (RDS(ON) of 4.3m typ. at VGS = 10V), fast switching speeds, high avalanche ruggedness, and excellent gate charge characteristics. It is ideally suited for applications such as motor drivers, general switching applications, and current switching in DC/DC and AC/DC (SR) subsystems.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Miracle Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage | 85 | V | ||||
| Current | 120 | A | ||||
| RDS(ON) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | 4.3 | 5.3 | m | |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 85 | V | ||
| VGS | Gate-Source Voltage | -20 | 20 | V | ||
| ID | Drain Current-Continuous (TC = 25C) | 120 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | 87.4 | A | |||
| IDM | Drain Current-Pulsed | 480 | A | |||
| PD | Maximum Power Dissipation (@ TJ = 25C) | 173.6 | W | |||
| EAS | Single Pulsed Avalanche Energy | 400 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.72 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62.5 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 85 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 85V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.0 | - | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | - | 4.3 | 5.3 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 40V, VGS = 0V, f = 1MHz | - | 4021 | - | pF |
| Coss | Output Capacitance | - | 637 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 17 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 40V, VGS = 10V, ID = 50A, RG = 3 | - | 22 | - | ns |
| tr | Turn-On Rise Time | - | 42 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 48 | - | ns | |
| tf | Turn-Off Fall Time | - | 25 | - | ns | |
| Qg | Total Gate Charge | VDD = 40V, VGS = 10V, ID = 50A | - | 80 | - | nC |
| Qgs | Gate-Source Charge | - | 23 | - | nC | |
| Qgd | Gate-Drain Charge | - | 24 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG=VD=0V, Force Current | - | - | 120 | A |
| ISM | Maximum Pulsed Current | - | - | 480 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 50A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IS = 20A, di/dt = 100A/s | - | 60 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IS = 20A, di/dt = 100A/s | - | 136 | - | nC |
2504151445_MIRACLE-POWER-MS8001B_C47361195.pdf
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