PNP resistor equipped transistors Nexperia PDTA114EU 115 for industrial digital switching applications
Key Attributes
Model Number:
PDTA114EU,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
13kΩ
Resistor Ratio:
1.2
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA114EU,115
Package:
SOT-323
Product Description
Product Overview
The PDTA114E series comprises PNP resistor-equipped transistors (RETs) designed for digital applications in automotive and industrial segments. These transistors are housed in small Surface-Mounted Device (SMD) plastic packages, offering reduced component count and simplified circuit design due to their built-in bias resistors. They serve as a cost-saving alternative to BC847/857 series in digital applications, facilitating control of IC inputs and switching loads. The series is AEC-Q101 qualified.
Product Attributes
- Brand: NXP Semiconductors
- Type: PNP Resistor-Equipped Transistor (RET)
- Certifications: AEC-Q101 qualified
Technical Specifications
| Type Number | Package | NPN Complement | Output Current (IO) | R1 Bias Resistor | R2/R1 Bias Resistor Ratio | Collector-Emitter Voltage (VCEO) |
|---|---|---|---|---|---|---|
| PDTA114EE | SOT416 (SC-75) | PDTC114EE | -100 mA | 7 - 13 k (Typ 10 k) | 0.8 - 1.2 (Typ 1.0) | -50 V |
| PDTA114EM | SOT883 (SC-101) | PDTC114EM | -100 mA | 7 - 13 k (Typ 10 k) | 0.8 - 1.2 (Typ 1.0) | -50 V |
| PDTA114ET | SOT23 (TO-236AB) | PDTC114ET | -100 mA | 7 - 13 k (Typ 10 k) | 0.8 - 1.2 (Typ 1.0) | -50 V |
| PDTA114EU | SOT323 (SC-70) | PDTC114EU | -100 mA | 7 - 13 k (Typ 10 k) | 0.8 - 1.2 (Typ 1.0) | -50 V |
Key Features and Benefits
- 100 mA output current capability
- Reduces component count
- Built-in bias resistors simplify circuit design
- Reduces pick and place costs
- Cost-saving alternative for BC847/857 series in digital applications
Applications
- Digital applications in automotive and industrial segments
- Control of IC inputs
- Switching loads
Pinning Information
| Pin | Description |
|---|---|
| 1 | Input (base) |
| 2 | GND (emitter) |
| 3 | Output (collector) |
Marking Codes
| Type Number | Marking Code |
|---|---|
| PDTA114EE | 03 |
| PDTA114EM | E5 |
| PDTA114ET | *03 |
| PDTA114EU | *03 |
Limiting Values
| Symbol | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| VCBO | Collector-base voltage | open emitter | - | -50 | V |
| VCEO | Collector-emitter voltage | open base | - | -50 | V |
| VEBO | Emitter-base voltage | open collector | - | -10 | V |
| VI | Input voltage | positive | - | +40 | V |
| VI | Input voltage | negative | - | -10 | V |
| IO | Output current | - | - | -100 | mA |
| ICM | Peak collector current | single pulse; tp 1 ms | - | -100 | mA |
| Ptot | Total power dissipation | Tamb 25 C; PDTA114EE (SOT416) | - | 150 | mW |
| Ptot | Total power dissipation | Tamb 25 C; PDTA114EM (SOT883) | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C; PDTA114ET (SOT23) | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C; PDTA114EU (SOT323) | - | 200 | mW |
| Tj | Junction temperature | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | +150 | C |
| Tstg | Storage temperature | - | -65 | +150 | C |
Thermal Characteristics
| Symbol | Parameter | Conditions | Typ | Unit |
|---|---|---|---|---|
| Rth(j-a) | Thermal resistance from junction to ambient | in free air; PDTA114EE (SOT416) | 830 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air; PDTA114EM (SOT883) | 500 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air; PDTA114ET (SOT23) | 500 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air; PDTA114EU (SOT323) | 625 | K/W |
Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A | - | - | -1 | A |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A; Tj = 150 C | - | - | -5 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -400 | A |
| hFE | DC current gain | VCE = -5 V; IC = -5 mA | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -10 mA; IB = -0.5 mA | - | - | -150 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | - | -1.1 | -0.8 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -10 mA | -2.5 | -1.8 | - | V |
| R1 | Bias resistor 1 (input) | - | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1.0 | 1.2 | - |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz | 180 | - | - | MHz |
Quality Information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
Package Outlines
Refer to Figures 12-15 in the original datasheet for detailed package dimensions.
Packing Information
| Type Number | Package | Description | Packing Quantity |
|---|---|---|---|
| PDTA114EE | SOT416 | 4 mm pitch, 8 mm tape and reel | 3000 |
| PDTA114EM | SOT883 | 2 mm pitch, 8 mm tape and reel | 10000 |
| PDTA114ET | SOT23 | 4 mm pitch, 8 mm tape and reel | 10000 |
| PDTA114EU | SOT323 | 4 mm pitch, 8 mm tape and reel | 3000 |
Soldering
Reflow soldering is the only recommended soldering method.
2410121732_Nexperia-PDTA114EU-115_C126005.pdf
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