High Current N Channel MOSFET Minos MPG180N10P with Low On Resistance and High Density Cell Structure
Key Attributes
Model Number:
MPG180N10P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@10V,70A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
635pF
Number:
1 N-channel
Input Capacitance(Ciss):
13.5nF@25V
Pd - Power Dissipation:
211W
Gate Charge(Qg):
108nC@10V
Mfr. Part #:
MPG180N10P
Package:
TO-220
Product Description
Product Overview
The MPG180N10P is an N-Channel Power MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. Its design is optimized for high ESD capability and a high-density cell structure for reduced on-resistance. This MOSFET is suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. It is fully characterized for avalanche voltage and current, ensuring good stability and uniformity with high EAS, and features an excellent package for effective heat dissipation.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China
Technical Specifications
| Product Code | Package | VDS (V) | ID (A) | RDS(ON) (m @ VGS=10V) | EAS (mJ) | PD (W) | RJC (/W) | VGS(th) (V) | Qg (nC) |
| MPG180N10P | TO-220 | 100 | 180 | < 6 | 1200 | 211 | 0.36 | 2-4 | 108 |
| MPG180N10S | TO-263 | 100 | 180 | < 6 | 1200 | 211 | 0.36 | 2-4 | 108 |
2410122013_Minos-MPG180N10P_C5240685.pdf
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