High Voltage N Channel MOSFET Minos MD59N30 with Fast Switching and Low Capacitance Characteristics
Key Attributes
Model Number:
MD59N30
Product Custom Attributes
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
59A
RDS(on):
35mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
49pF
Number:
1 N-channel
Input Capacitance(Ciss):
9.55nF
Pd - Power Dissipation:
420W
Output Capacitance(Coss):
895pF
Gate Charge(Qg):
155nC@10V
Mfr. Part #:
MD59N30
Package:
TO-3P
Product Description
Product Description
The MD59N30 is an N-Channel Enhanced MOSFET designed using advanced MOSFET technology to minimize conduction losses, improve switching performance, and enhance avalanche energy. It is suitable for high-frequency switching mode power supplies (SMPS), high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen Minos Technology Co., Ltd.
- Certifications: RoHS product
- Package: TO-3PN
Technical Specifications
| Parameter | Value | Unit | Conditions |
| General Features | |||
| VDS | 300 | V | |
| ID | 59 | A | |
| RDS(ON) | < 45 | m | VGS=10V |
| Switching | Fast | ||
| Capacitance | Low Crss | ||
| Avalanche Test | 100% tested | ||
| dv/dt Capability | Improved | ||
| Absolute Maximum Ratings | |||
| VDSS | 300 | V | at TC = 25C, unless otherwise specified |
| ID (Continuous Drain Current) | 59 | A | at TC = 25C |
| ID (Continuous Drain Current) | 36.6 | A | at TC = 100C |
| IDM (Pulsed Drain Current) | 236 | A | (Note1) |
| VGS (Gate-to-Source Voltage) | 30 | V | |
| EAS (Single Pulse Avalanche Energy) | 2600 | mJ | (Note2) |
| dv/dt (Peak Diode Recovery) | 5.0 | V/ns | (Note3) |
| PD (Power Dissipation) | 420 | W | TO-247 |
| Derating Factor above 25C | 3.5 | W/ | |
| TJ, Tstg (Operating Junction and Storage Temperature Range) | -55 to 150 | ||
| TL (Maximum Temperature for Soldering) | 300 | ||
| Thermal Characteristics | |||
| RJC (Junction-to-Case) | 0.29 | /W | |
| RJA (Junction-to-Ambient) | 40 | /W | |
| Electrical Characteristics (OFF Characteristics) | |||
| VDSS (Drain to Source Breakdown Voltage) | 300 | V | VGS=0V, ID=250A |
| BVDSS/ TJ (Bvdss Temperature Coefficient) | 0.25 | V/ | ID=250uA, Reference 25 |
| IDSS (Drain to Source Leakage Current) | 1 | A | VDS=300V, VGS=0V, Tj = 25 |
| IDSS (Drain to Source Leakage Current) | 10 | A | VDS =240V, VGS=0V, Tj = 125 |
| IGSS(F) (Gate to Source Forward Leakage) | 100 | nA | VGS=+30V |
| IGSS(R) (Gate to Source Reverse Leakage) | 100 | nA | VGS=-30V |
| Electrical Characteristics (ON Characteristics) | |||
| RDS(ON) (Drain-to-Source On- Resistance) | 35-45 | m | VGS=10V, ID=29.5A(Note4) |
| VGS(TH) (Gate Threshold Voltage) | 2.0-4.0 | V | VDS = VGS, ID = 250A(Note4) |
| gfs (Forward Transconductance) | 52 | S | VDS=15V, ID =40A(Note4) |
| Dynamic Characteristics | |||
| Rg (Gate resistance) | 0.85 | f = 1.0MHz | |
| Ciss (Input Capacitance) | 9550 | PF | VGS = 0V, VDS=25V, f=1.0MHz |
| Coss (Output Capacitance) | 895 | PF | |
| Crss (Reverse Transfer Capacitance) | 49 | PF | |
| Switching Characteristics | |||
| td(ON) (Turn-on Delay Time) | 160 | ns | ID =59A, VDD=150V, VGS= 10V, RG =20 |
| tr (Rise Time) | 550 | ns | |
| td(OFF) (Turn-Off Delay Time) | 122 | ns | |
| tf (Fall Time) | 198 | ns | |
| Qg (Total Gate Charge) | 155 | nC | ID =59A, VDD=240V, VGS = 10V |
| Qgs (Gate to Source Charge) | 46 | nC | |
| Qgd (Gate to Drain (Miller)Charge) | 40 | nC | |
| Source-Drain Diode Characteristics | |||
| IS (Continuous Source Current (Body Diode)) | 59 | A | TC=25 C |
| ISM (Maximum Pulsed Current (Body Diode)) | 36.6 | A | |
| VSD (Diode Forward Voltage) | 1.2 | V | IS=59A, VGS=0V(Note4) |
| Trr (Reverse Recovery Time) | 236 | ns | IS=59A, Tj = 25C, dIF/dt=100A/us, VGS=0V |
| Qrr (Reverse Recovery Charge) | 6879 | nC | |
| Irrm (Reverse Recovery Current) | 58.3 | A | |
2506121200_Minos-MD59N30_C49108787.pdf
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