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quality Robust N Channel Power MOSFET MIRACLE POWER MJF25N60 with Low On Resistance and High Voltage Rating factory
quality Robust N Channel Power MOSFET MIRACLE POWER MJF25N60 with Low On Resistance and High Voltage Rating factory

Robust N Channel Power MOSFET MIRACLE POWER MJF25N60 with Low On Resistance and High Voltage Rating

Key Attributes
Model Number: MJF25N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
25A
RDS(on):
170mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
3.79pF
Input Capacitance(Ciss):
1.76nF
Output Capacitance(Coss):
176pF
Gate Charge(Qg):
37.7nC@13V
Mfr. Part #:
MJF25N60
Package:
TO-220F
Product Description

Product Overview

The MJF25N60 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It is rated at 600V and 25A with a typical on-resistance of 139m at VGS = 10V. This device is 100% avalanche tested and is suitable for various power applications including PC power, adaptors, server and telecom power supplies, LCD & PDP TVs, LED lighting, and UPS systems. It is also applicable in Boost PFC switch, single-ended flyback, two-transistor forward, HB, AHB, or LLC topologies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Advanced Super Junction Technology
  • Type: N-Channel Power MOSFET

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage TC = 25C - - 600 V
VGS Gate-Source Voltage - - 30 V
ID Drain Current-Continuous TC = 25C - - 25 A
IDM Drain Current-Pulsed - - 75 A
PD Maximum Power Dissipation TC = 25C - - 34 W
dv/dt Peak Diode Recovery dv/dt - - 15 V/ns
EAS Single Pulsed Avalanche Energy - - 781 mJ
TJ, TSTG Operating and Store Temperature Range - -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - 3.67 C/W
RJA Thermal Resistance, Junction to Ambient - - 80 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 605 - - V
IDSS Zero Gate Voltage Drain Current VDS = 600, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.8 - 4.2 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 12.5A - 139 170 m
Dynamic Characteristics
RG Gate Resistance f = 1.0MHz - 5.5 -
Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 10kHz - 1760 - pF
Coss Output Capacitance - - 176 - pF
Crss Reverse Transfer Capacitance - - 3.79 - pF
On Characteristics
td(on) Turn-On Delay Time VDD = 400V, VGS = 13V, ID = 11.3A, RG = 1.7 - 8.4 - ns
tr Turn-On Rise Time - - 3.5 - ns
td(off) Turn-Off Delay Time - - 47.5 - ns
tf Turn-Off Fall Time - - 10.2 - ns
Qg Total Gate Charge VDD = 400V, VGS = 10V, ID = 11.3A - 37.7 - nC
Qgs Gate-Source Charge - - 8.91 - -
Qgd Gate-Drain Charge - - 13.52 - -
Drain-Source Diode Characteristics
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.71 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 11.3A, dIF/dt = 100A/s - 280.2 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 11.3A, dIF/dt = 100A/s - 4.109 - C
Irrm Peak reverse recovery current VR = 400V, IF = 11.3A, dIF/dt = 100A/s - 29.79 - A

2504151445_MIRACLE-POWER-MJF25N60_C47361035.pdf

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