switching MOSFET Minos MLS65R380P with 650 volt drain source voltage and avalanche tested capability
Key Attributes
Model Number:
MLS65R380P
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-
RDS(on):
330mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
560pF
Input Capacitance(Ciss):
770pF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
21.8nC
Mfr. Part #:
MLS65R380P
Package:
TO-220F
Product Description
Product Overview
The MLS65R380P is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design significantly reduces conduction losses and enhances switching performance, making it ideal for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key features include a VDS of 650V, ID of 11A, and RDS(ON) < 0.33 at VGS=10V. It is 100% avalanche tested and offers improved dv/dt capability.
Product Attributes
- Brand: MNS
- Origin: Shenzhen, China (implied by contact information)
- Material: Silicon
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-source Voltage | VGS=0V, ID=250A | 650 | V | ||
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=10V,ID=3.8A | 0.33 | 0.38 | ||
| VGS(th) | Gated Threshold Voltage | VDS=VGS, D=250A | 2 | 4 | V | |
| IDSS | Drain-Source Leakage Current | VDS=650V, VGS= 0V | 1.0 | A | ||
| IGSS(F) | Gate-Source Forward Leakage | VGS= +30V | 100 | nA | ||
| IGSS(R) | Gate-Source Reverse Leakage | VGS= -30V | -100 | nA | ||
| Ciss | Input Capacitance | VGS = 0V, VDS = 25V, f = 1.0MHz | 770 | pF | ||
| Coss | Output Capacitance | 560 | pF | |||
| Crss | Reverse Transfer Capacitance | 25 | pF | |||
| Qg | Total Gate Charge | ID =4.8A, VDD =520V, VGS = 10V | 21.8 | nC | ||
| Qgs | Gate-Source Charge | 4.5 | nC | |||
| Qgd | Gate-Drain Charge | 8 | nC | |||
| td(on) | Turn-on Delay Time | ID =4.8A, VDD =400V, VGS =10V, VRG=5 | 11 | nS | ||
| tr | Turn-on Rise Time | 9 | nS | |||
| td(off) | Turn-off Delay Time | 38 | nS | |||
| tf | Turn-off Fall Time | 8 | nS | |||
| IS | Continuous Source Current (Body Diode) | TC=25 C | -- | -- | 11 | A |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 33 | A | |
| VSD | Diode Forward Voltage | IS=4.8A, VGS=0V | -- | -- | 0.9 | V |
| Trr | Reverse Recovery Time | IS=4.8A, Tj = 25C, dIF/dt=100A/us, VGS=0V | -- | 285 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 3135 | -- | nC | |
| Irrm | Reverse Recovery Current | -- | 22 | -- | A |
| Symbol | Parameter | Value | Units |
|---|---|---|---|
| VDS | Drain-to-Source Breakdown Voltage | 650 | V |
| ID | Drain Current (continuous) at Tc=25 | 11 | A |
| IDM | Drain Current (pulsed) | 33 | A |
| VGS | Gate to Source Voltage | 20 | V |
| Ptot | Total Dissipation at Tc=25 | 31 | W |
| Tj Max. | Operating Junction Temperature | 150 | |
| Eas | Single Pulse Avalanche Energy | 250 | mj |
2411120955_Minos-MLS65R380P_C7587859.pdf
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