Minos MDT20P10D P Channel Power MOSFET with high density cell design and thermal management package
Key Attributes
Model Number:
MDT20P10D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+175℃
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.7V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
67pF
Pd - Power Dissipation:
72W
Input Capacitance(Ciss):
2.36nF
Output Capacitance(Coss):
81pF
Gate Charge(Qg):
71nC@10V
Mfr. Part #:
MDT20P10D
Package:
TO-252
Product Description
Product Overview
The MDT20P10D is a P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design, characterized avalanche voltage and current, and excellent package for heat dissipation contribute to its stability, uniformity, and reliability.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | VDS | Drain-Source Voltage | -100 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Drain Current-Continuous | -20 | A | |||
| IDM | Drain Current-Pulsed (Note 1) | -20 | A | |||
| PD | Maximum Power Dissipation(TA=25) | 72 | W | |||
| EAS | Single pulse avalanche energy(Note 2) | 80 | mJ | |||
| Thermal Characteristic | RJC | Thermal Resistance,Junction-to-Case | 2.12 | /W | ||
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 | 175 | |||
| Off Characteristics | BVDSS | Drain-Source Breakdown Voltage VGS=0V ID=-250A | -100 | V | ||
| IDSS | Zero Gate Voltage Drain Current VDS=-100V,VGS=0V | -1 | µA | |||
| IGSS | Gate-Body Leakage Current VGS=±20V,VDS=0V | ±100 | nA | |||
| On Characteristics | VGS(th) | Gate Threshold Voltage VDS=VGS,ID=-250µA | -1.0 | -1.7 | -2.4 | V |
| RDS(ON) | Drain-Source On-State Resistance(Note 3) VGS=-10V, ID=-10A | 70 | 80 | mΩ | ||
| RDS(ON) | Drain-Source On-State Resistance(Note 3) VGS=-4.5V, ID=-10A | 80 | 90 | mΩ | ||
| Forward Transconductance | gFS | VDS=-50V,ID=-10A | 7.2 | S | ||
| Dynamic Characteristics | Clss | Input Capacitance VDS=-50V,VGS=0V, f=1.0MHz | 2360 | pF | ||
| Coss | Output Capacitance | 81 | pF | |||
| Crss | Reverse Transfer Capacitance | 67 | pF | |||
| Switching Characteristics (Note 4) | td(on) | Turn-on Delay Time VDD=-50V, ID=-20A, VGS=-10V,RGEN=10Ω | 20 | nS | ||
| tr | Turn-on Rise Time | 11 | nS | |||
| td(off) | Turn-Off Delay Time | 100 | nS | |||
| tf | Turn-Off Fall Time | 38 | nS | |||
| Gate Charge | Qg | Total Gate Charge VDS=-50V,ID=-16A VGS=-10V | 71 | nC | ||
| Qgs | Gate-Source Charge | 13 | nC | |||
| Qgd | Gate-Drain Charge | 13 | nC | |||
| Drain-Source Diode Characteristics | VSD | Diode Forward Voltage VGS=0V,IS=-10A | -1.2 | V |
2506121200_Minos-MDT20P10D_C49108782.pdf
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