100V P Channel Power MOSFET Minos MDT15P10D with Low Gate Charge and High Energy Avalanche Stability
Key Attributes
Model Number:
MDT15P10D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+175℃
RDS(on):
90mΩ@10V;100mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
67pF
Pd - Power Dissipation:
72W
Input Capacitance(Ciss):
2.36nF
Output Capacitance(Coss):
81pF
Gate Charge(Qg):
71nC@10V
Mfr. Part #:
MDT15P10D
Package:
TO-252
Product Description
Product Description
The MDT15P10D is a 100V P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China
- Package Type: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | VDS | Drain-Source Voltage | -100 | V | ||
| VGS | Gate-Source Voltage | 10 | V | |||
| ID | Drain Current-Continuous | -15 | A | |||
| IDM | Drain Current-Pulsed (Note 1) | -15 | A | |||
| PD | Maximum Power Dissipation(TA=25) | 72 | W | |||
| EAS | Single pulse avalanche energy(Note 2) | 80 | mJ | |||
| Thermal Characteristic | RJC | Thermal Resistance,Junction-to-Case | 2.12 | /W | ||
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 | 175 | |||
| Note 1 | Repetitive Rating: Pulse width limited by maximum junction temperature. | |||||
| Off Characteristics | BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=-250A) | -100 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VDS=-100V,VGS=0V) | -1 | A | |||
| IGSS | Gate-Body Leakage Current (VGS=10V,VDS=0V) | 100 | nA | |||
| VGS(th) | Gate Threshold Voltage (VDS=VGS,ID=-250A) | -1.0 | -2.4 | V | ||
| On Characteristics | RDS(ON) | Drain-Source On-State Resistance (Note 3) (VGS=-10V, ID=-15A) | 90 | 100 | m | |
| RDS(ON) | Drain-Source On-State Resistance (Note 3) (VGS=-4.5V, ID=-15A) | 100 | 110 | m | ||
| Forward Transconductance | gFS | (VDS=-50V,ID=-15A) | 7.2 | S | ||
| Dynamic Characteristics | Clss | Input Capacitance (VDS=-50V,VGS=0V, f=1.0MHz) | 2360 | pF | ||
| Coss | Output Capacitance | 81 | pF | |||
| Crss | Reverse Transfer Capacitance | 67 | pF | |||
| Switching Characteristics (Note 4) | td(on) | Turn-on Delay Time (VDD=-50V, ID=-15A, VGS=-10V,RGEN=10) | 20 | nS | ||
| tr | Turn-on Rise Time | 11 | nS | |||
| td(off) | Turn-Off Delay Time | 100 | nS | |||
| tf | Turn-Off Fall Time | 38 | nS | |||
| Gate Charge | Qg | Total Gate Charge (VDS=-50V,ID=-16A, VGS=-10V) | 71 | nC | ||
| Qgs | Gate-Source Charge | 13 | nC | |||
| Qgd | Gate-Drain Charge | 13 | nC | |||
| Drain-Source Diode Characteristics | VSD | Diode Forward Voltage (VGS=0V,IS=-10A) | -1.2 | V | ||
| Note 2 | EAS condition :T j=25,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25 | |||||
| Note 3 | Pulse Test: Pulse Width 300s, Duty Cycle 2%.Guaranteed by design, not subject to production | |||||
| Note 4 | Test Circuit and Waveform |
2506121200_Minos-MDT15P10D_C49108795.pdf
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