Power MOSFET N Channel 650V 20A Miracle Power MPC20N65 with Low On Resistance and Tested Reliability
Key Attributes
Model Number:
MPC20N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
500mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
-
Input Capacitance(Ciss):
3.059nF
Output Capacitance(Coss):
291pF
Pd - Power Dissipation:
250W
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
MPC20N65
Package:
TO-220
Product Description
MPC20N65 N-Channel Power MOSFET
The MPC20N65 is an N-Channel Power MOSFET manufactured by Miracle Technology Co., Ltd. This component features a high breakdown voltage of 650V and a continuous drain current of 20A. It offers a low on-resistance of 0.40 (typ.) at VGS = 10V, low Crss, and fast switching characteristics. The device is 100% avalanche tested, making it suitable for applications such as adapters, standby power supplies, and switching mode power supplies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Model: MPC20N65
- Origin: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | VGS = 10V | 0.40 | ||||
| 650V | 20A | |||||
| Low Crss | Yes | |||||
| Fast Switching | Yes | |||||
| Avalanche Tested | 100% | |||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | TC = 25C unless otherwise noted | 650 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 20 | A | ||
| ID | Drain Current-Continuous | TC = 100C | 12.5 | A | ||
| IDM | Drain Current-Pulsed | 804 | A | |||
| PD | Maximum Power Dissipation | TJ = 25C | 250 | W | ||
| EAS | Single Pulsed Avalanche Energy | d | 980 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | 0.5 | C/W | |||
| RJA | Thermal Resistance Junction-Ambient | 62.5 | C/W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | 1 | A | ||
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | 4 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID =10A | 0.40 | 0.50 | ||
| gfs | Forward Transconductance | VDS = 15V,ID =10A | 16 | S | ||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | 3059 | pF | ||
| Coss | Output Capacitance | 291 | pF | |||
| Crss | Reverse Transfer Capacitance | 16 | pF | |||
| td(on) | Turn-On Delay Time | VDD = 325V, ID =20A, RG = 25,VGS=10V | 37 | ns | ||
| tr | Turn-On Rise Time | 70 | ns | |||
| td(off) | Turn-Off Delay Time | 89 | ns | |||
| tf | Turn-Off Fall Time | 49 | ns | |||
| Qg | Total Gate Charge | VDS = 325V, ID =20A, VGS = 10V | 53 | nC | ||
| Qgs | Gate-Source Charge | 11 | nC | |||
| Qgd | Gate-Drain Charge | 19 | nC | |||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | 20 | A | ||
| ISM | Maximum Pulsed Current | VGS = 0V | 80 | A | ||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 20A | 0.9 | 1.4 | V | |
Applications
- Adapter
- Standby Power
- Switching Mode Power Supply
2410122015_MIRACLE-POWER-MPC20N65_C17701995.pdf
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