N Channel Power MOSFET Minos MDT100N06 60 Volt 100 Amp TO 252 2L Package Ideal for Switching and UPS

Key Attributes
Model Number: MDT100N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
270pF
Number:
1 N-channel
Output Capacitance(Coss):
345pF
Input Capacitance(Ciss):
3.7nF
Pd - Power Dissipation:
143W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
MDT100N06
Package:
TO-252-2L
Product Description

Product Description

The MDT100N06 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, high density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and uniformity. The device is 100% UIS and DVDS tested and features an excellent package for good heat dissipation.

Product Attributes

  • Brand: MNS-KX
  • Origin: Shenzhen Minos Technology Co., Ltd.
  • Certifications: 100% UIS TESTED, 100% DVDS TESTED

Technical Specifications

Device MarkingOrdering CodesPackageVDS (V)ID (A)RDS(ON) (m) @ VGS=10VEAS (mJ)PD (W) @ Tc=25
M100N06MPG100N06TO-22060100< 7.0260143
M100N06MDT100N06TO-252-2L60100< 7.0260143
M100N06MPS100N06TO-263-2L60100< 7.0260143

2504301112_Minos-MDT100N06_C5240686.pdf

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