650V 10A N Channel MOSFET MIRACLE POWER MPP10N65 Suitable for Adapter and E Bike Charger Electronics
Key Attributes
Model Number:
MPP10N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
6.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.595nF
Pd - Power Dissipation:
100W
Output Capacitance(Coss):
134pF
Gate Charge(Qg):
31.9nC@10V
Mfr. Part #:
MPP10N65
Package:
PTO-252
Product Description
Product Overview
The MPP10N65 is a 650V, 10A N-Channel Power MOSFET from Miracle Technology Co., Ltd. It features low Crss, fast switching, and is 100% avalanche tested. This MOSFET is ideal for applications such as adapters, LCD/PDP adapters, and e-bike chargers.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Series: MPP
- Model: MPP10N65
- Technology: Miracle Technology
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Features | |||||
| Voltage | 650 | V | |||
| Current | 10 | A | |||
| RDS(ON) (Typ.) | VGS = 10V | 0.80 | |||
| Absolute Maximum Ratings | |||||
| VDS | 650 | V | |||
| VGS | -30 | 30 | V | ||
| ID (Continuous, TC =25C) | 10 | A | |||
| ID (Continuous, TC =100C) | 5.5 | A | |||
| IDM (Pulsed) | 40 | A | |||
| PD (Max Power Dissipation @ TJ =25C) | 100 | W | |||
| EAS (Single Pulsed Avalanche Energy) | 405 | J | |||
| TJ, TSTG (Operating and Store Temperature Range) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| RJC (Thermal Resistance, Junction-Case) | 1.25 | C/W | |||
| RJA (Thermal Resistance Junction-Ambient) | 62.5 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS (Zero Gate Voltage Drain Current) | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS (Forward Gate Body Leakage Current) | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | |||||
| VGS(th) (Gate Threshold Voltage) | VDS = VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = 10V, ID =5A | - | 0.80 | 1.00 | |
| Dynamic Characteristics | |||||
| Ciss (Input Capacitance) | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1595 | - | pF |
| Coss (Output Capacitance) | - | 134 | - | pF | |
| Crss (Reverse Transfer Capacitance) | - | 6.6 | - | pF | |
| Switching Characteristics | |||||
| td(on) (Turn-On Delay Time) | VDD = 325V, ID =10A, RG = 25,VGS=10V | - | 25 | - | ns |
| tr (Turn-On Rise Time) | - | 21 | - | ns | |
| td(off) (Turn-Off Delay Time) | - | 50 | - | ns | |
| tf (Turn-Off Fall Time) | - | 23 | - | ns | |
| Qg (Total Gate Charge) | VDS = 325V, ID =10A, VGS = 10V | - | 31.9 | - | nC |
| Qgs (Gate-Source Charge) | - | 8.1 | - | nC | |
| Qgd (Gate-Drain Charge) | - | 11.9 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| IS (Drain-Source Diode Forward Continuous Current) | VGS = 0V | - | - | 10 | A |
| ISM (Maximum Pulsed Current) | VGS = 0V | - | - | 40 | A |
| VSD (Drain-Source Diode Forward Voltage) | VGS = 0V, IS = 10A | - | 1.4 | - | V |
| Trr (Body Diode Reverse Recovery Time) | di/dt=100A/us, IS=10A,VGS=0V | - | 498 | - | ns |
| Qrr (Reverse Recovery Charge) | - | 3039 | - | nC | |
Notes:
a. TJ=+25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width300us; duty cycle2%
d. L=10mH, VDD=50V,Ias=9A,RG=25 Starting TJ=25
Applications:
- Adapter
- LCD/PDP Adapter
- E-Bike Charger
2410122025_MIRACLE-POWER-MPP10N65_C17701987.pdf
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