Power MOSFET Minos MDT2N60 600V 2A TO252 Package Low On Resistance Fast Switching Device
Key Attributes
Model Number:
MDT2N60
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.4Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
2pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
300pF@25V
Pd - Power Dissipation:
34W
Gate Charge(Qg):
5.7nC@10V
Mfr. Part #:
MDT2N60
Package:
TO-252
Product Description
Product Overview
The MNS-KX 600V N-Channel Power MOSFET offers high performance and ruggedness for various applications. Key features include low on-state resistance (RDS(ON) < 4.4 @ VGS = 10V, ID =1A), fast switching capabilities, and improved dv/dt capability. This device is lead-free and compliant with the EU RoHS directive. Available in TO-251, TO-252, and TO-220F packages.
Product Attributes
- Brand: MNS-KX
- Certifications: EU RoHS directive compliant
- Origin: Shenzhen, China (implied by contact information)
Technical Specifications
| Part Number | Package | Ordering Information | RDS(ON) | VDSS | ID | PD | TJ | TOPR | TSTG |
| MDP2N60 | TO-251 | 75pcs / Tube | <4.4 @ VGS = 10V, ID =1A | 600V | 2.0A | 34W | +150C | -55 ~ +150C | -55 ~ +150C |
| MDT2N60 | TO-252 | 2.5Kpcs / 13 Reel | <4.4 @ VGS = 10V, ID =1A | 600V | 2.0A | 34W | +150C | -55 ~ +150C | -55 ~ +150C |
| MPF2N60 | TO-220F | 50pcs / Tube | <4.4 @ VGS = 10V, ID =1A | 600V | 2.0A | 44W | +150C | -55 ~ +150C | -55 ~ +150C |
2411220027_Minos-MDT2N60_C5121607.pdf
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