N Channel Power MOSFET Minos IRF1405 offering low gate charge and high power dissipation for switching
Key Attributes
Model Number:
IRF1405
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
190A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
680pF
Number:
1 N-channel
Output Capacitance(Coss):
760pF
Input Capacitance(Ciss):
8.2nF
Pd - Power Dissipation:
210W
Gate Charge(Qg):
186nC@10V
Mfr. Part #:
IRF1405
Package:
TO-220
Product Description
Product Overview
The IRF1405 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for efficient heat dissipation.
Product Attributes
- Brand: mns-kx.com
- Origin: Shenzhen Minos Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 190 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 600 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 210 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 1000 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.7 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=50A | - | 3.2 | 3.5 | m |
| Forward Transconductance | gFS | VDS=50V,ID=75A | - | 180 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V, VGS=0V, f=1.0MHz | - | 8200 | - | pF |
| Output Capacitance | Coss | - | 760 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 680 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=40A, VGS=10V,RGEN=3 | - | 27 | - | nS |
| Turn-on Rise Time | tr | - | 25 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 90 | - | nS | |
| Turn-Off Fall Time | tf | 40 | - | - | nS | |
| Total Gate Charge | Qg | VDS=60V,ID=40A, VGS=10V | - | 186 | - | nC |
| Gate-Source Charge | Qgs | - | 46 | - | nC | |
| Gate-Drain Charge | Qg d | - | 70 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=190A | - | - | 1.2 | V |
2410122012_Minos-IRF1405_C20624238.pdf
Related Products
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
