Silicon N Channel Power MOSFET Minos MDT4N65 Designed for Switching in Half Bridge Topology Circuits
Key Attributes
Model Number:
MDT4N65
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.5Ω@10V,1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
1 N-channel
Input Capacitance(Ciss):
710pF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
MDT4N65
Package:
TO-252
Product Description
MDT4N65 Silicon N-Channel Power MOSFET
The MDT4N65 is a Power MOSFET produced using Wisdoms advanced planar stripe, DMOS technology. This technology is designed to minimize on-state resistance and provide high rugged avalanche characteristics. It is well-suited for high efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
Product Attributes
- Brand: Wisdom (implied by technology description)
- Origin: Shenzhen Minos (implied by contact information)
Technical Specifications
| Parameter | Value | Units | Conditions |
| VDS | 650 | V | |
| ID | 4 | A | Continuous Drain Current |
| ID @ TC=100C | 2.5 | A | Continuous Drain Current |
| IDM | 16 | A | Pulsed Drain Current |
| VGS | ±30 | V | |
| EAS | 240 | mJ | Single Pulse Avalanche Energy |
| dv/dt | 4.5 | V/ns | Peak Diode Recovery |
| PD @ TO-252 | 50 | W | Power Dissipation |
| Derating Factor above 25C | 0.18 | W/ | |
| TJ, Tstg | 150, –55 to 150 | Operating Junction and Storage Temperature Range | |
| Soldering Temperature | 300 | Maximum Temperature for Soldering | |
| RJC | 5.5 | /W | Junction-to-Case |
| RJA | 62.5 | /W | Junction-to-Ambient |
| BVDSS | 650 | V | VGS=0V, ID=250µA |
| ΔBVDSS/ΔTJ | 0.6 | V/°C | ID=250µA, Reference 25°C |
| IDSS @ Tj=25°C | 1 | µA | VDS=600V, VGS=0V |
| IDSS @ Tj=125°C | 100 | µA | VDS=480V, VGS=0V |
| IGSS(F) | 100 | nA | VGS=+30V |
| IGSS(R) | -100 | nA | VGS=-30V |
| RDS(ON) | 2.5 | Ω | VGS=10V, ID=1.0A |
| VGS(TH) | 4.0 | V | VDS = VGS, ID = 250µA |
| Rg | 25 | Ω | f = 1.0MHz |
| Ciss | 710 | PF | VGS = 0V, VDS = 25V, F = 1.0MHz |
| Coss | 80 | PF | VGS = 0V, VDS = 25V, F = 1.0MHz |
| Crss | 11 | PF | VGS = 0V, VDS = 25V, F = 1.0MHz |
| td(ON) | 30 | ns | ID =2.0A, VDD = 300V, VGS = 10V, RG =25Ω |
| Tr | 80 | ns | ID =2.0A, VDD = 300V, VGS = 10V, RG =25Ω |
| td(OFF) | 110 | ns | ID =2.0A, VDD = 300V, VGS = 10V, RG =25Ω |
| tf | 90 | ns | ID =2.0A, VDD = 300V, VGS = 10V, RG =25Ω |
| Qg | 20 | nC | ID =2.0A, VDS =480V, VGS = 10V |
| Qgs | 2.8 | nC | ID =2.0A, VDS =480V, VGS = 10V |
| Qgd | 6 | nC | ID =2.0A, VDS =480V, VGS = 10V |
| IS | 4 | A | Continuous Source Current (Body Diode), TC=25 °C |
| ISM | 16 | A | Maximum Pulsed Current (Body Diode) |
| VSD | 1.4 | V | IS=2A, VGS=0V |
| Trr | 350 | ns | IS=2A, dIF/dt=100A/us, VGS=0V |
| Qrr | 2.2 | nC | IS=2A, dIF/dt=100A/us, VGS=0V |
2410122024_Minos-MDT4N65_C5121600.pdf
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