Load Switching Solutions Using MIRACLE POWER MU3009D N Channel Enhancement Mode MOSFET with 50A Drain Current
Key Attributes
Model Number:
MU3009D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
130pF
Input Capacitance(Ciss):
1.174nF
Output Capacitance(Coss):
162pF
Pd - Power Dissipation:
96W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
MU3009D
Package:
TO-252
Product Description
Product Overview
The MU3009D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Featuring advanced trench technology, it offers excellent RDS(ON) and low gate charge, making it suitable for load switching, PWM applications, and power management. This MOSFET boasts a 30V drain-source voltage and a continuous drain current of 50A, with a typical RDS(ON) of 6.4m at VGS = 10V.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Trench Technology
- Mode: N-Channel Enhancement Mode
- Lead Free: Yes
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 30 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | |||
| Drain Current-Continuous (ID) @ TC = 25C | 50 | A | |||
| Drain Current-Continuous (ID) @ TC = 100C | 31 | A | |||
| Drain Current-Pulsed (IDM) | 200 | A | |||
| Maximum Power Dissipation (PD) @ TJ = 25C | 96 | W | |||
| Single Pulsed Avalanche Energy (EAS) | 72 | mJ | |||
| Operating and Store Temperature Range (TJ, TSTG) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) | 1.3 | C/W | |||
| Thermal Resistance, Junction to Ambient (RJA) | 32 | C/W | |||
| Electrical Characteristics @ TJ = 25C | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 30 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 30V, VGS = 0V | - | - | 1 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 25A | - | 6.4 | 8.0 | m |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 4.5V, ID = 15A | - | 9.9 | 12.9 | m |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 15V, VGS = 0V, f = 1MHz | - | 1174 | - | pF |
| Output Capacitance (Coss) | - | 162 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 130 | - | pF | |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 15V, VGS = 10V, ID = 15A, RGEN = 3 | - | 7 | - | ns |
| Turn-On Rise Time (tr) | - | 15 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 25 | - | ns | |
| Turn-Off Fall Time (tf) | - | 6 | - | ns | |
| Total Gate Charge (Qg) | VDS = 15V, VGS = 0 to 10V, ID = 15A | - | 23 | - | nC |
| Gate-Source Charge (Qgs) | - | 4.5 | - | - | |
| Gate-Drain Charge (Qgd) | - | 5.5 | - | - | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | - | - | 50 | A | |
| Maximum Pulsed Current (ISM) | - | - | 200 | A | |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Body Diode Reverse Recovery Time (Trr) | IF = 20A, di/dt = 100A/s | - | 10 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | IF = 20A, di/dt = 100A/s | - | 3 | - | nC |
2504151445_MIRACLE-POWER-MU3009D_C47361160.pdf
Related Products
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
