Durable Minos IRF630N MOSFET designed to improve switching performance and reduce power dissipation
Key Attributes
Model Number:
IRF630N
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
260mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.6pF
Number:
1 N-channel
Output Capacitance(Coss):
90pF
Input Capacitance(Ciss):
550pF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
12nC
Mfr. Part #:
IRF630N
Package:
TO-220
Product Description
Product Overview
The IRF630N is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is a suitable device for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key features include fast switching, low Crss, 100% avalanche tested, and improved dv/dt capability. This product is RoHS compliant.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Material: Silicon
- Certifications: RoHS
Technical Specifications
| Parameter | Value | Unit | Description |
| VDS | 200 | V | Drain-to-Source Voltage |
| ID | 9 | A | Continuous Drain Current (at TC = 25C) |
| ID (TC=100C) | 5.5 | A | Continuous Drain Current |
| IDM | 36 | A | Pulsed Drain Current |
| VGS | 30 | V | Gate-to-Source Voltage |
| EAS | 200 | mJ | Single Pulse Avalanche Energy |
| dv/dt | 5.0 | V/ns | Peak Diode Recovery dv/dt |
| PD (TO-220, TO-251, TO-252) | 75 | W | Power Dissipation |
| PD (TO-220F) | 30 | W | Power Dissipation |
| TJ, Tstg | -55 to 150 | Operating Junction and Storage Temperature Range | |
| TL | 300 | Maximum Temperature for Soldering | |
| RDS(ON).Typ | 0.26 | Drain-to-Source On-Resistance (VGS=10V, ID=4A) | |
| VGS(TH) | 2.0 - 4.0 | V | Gate Threshold Voltage (VDS=VGS, ID=250A) |
| Ciss | 550 | PF | Input Capacitance (VGS=0V, VDS=25V, f=1.0MHz) |
| Coss | 90 | PF | Output Capacitance |
| Crss | 8.6 | PF | Reverse Transfer Capacitance |
| td(ON) | 10 | ns | Turn-on Delay Time (ID=9A, VDD=100V, VGS=10V, RG=5) |
| tr | 5 | ns | Rise Time |
| td(OFF) | 20 | ns | Turn-Off Delay Time |
| tf | 7 | ns | Fall Time |
| Qg | 12 | nC | Total Gate Charge (ID=9A, VDD=160V, VGS=10V) |
| Qgs | 3 | nC | Gate to Source Charge |
| Qgd | 6 | nC | Gate to Drain (Miller) Charge |
| IS | 9 | A | Continuous Source Current (Body Diode) |
| ISM | 36 | A | Maximum Pulsed Current (Body Diode) |
| VSD | 1.2 | V | Diode Forward Voltage (IS=9A, VGS=0V) |
| Trr | 110 | ns | Reverse Recovery Time (IS=9A, Tj= 25C, dIF/dt=100A/us) |
| Qrr | 465 | nC | Reverse Recovery Charge |
| RJC (No FullPAK) | 1.67 | /W | Junction-to-Case Thermal Resistance |
| RJA (No FullPAK) | 62.5 | /W | Junction-to-Ambient Thermal Resistance |
| RJC (FullPAK) | 4.17 | /W | Junction-to-Case Thermal Resistance |
| RJA (FullPAK) | 62.5 | /W | Junction-to-Ambient Thermal Resistance |
2411120955_Minos-IRF630N_C7429901.pdf
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