Low On Resistance MOSFET MIRACLE POWER MSA001B with High Continuous Current and Switching Capability
Key Attributes
Model Number:
MSA001B
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
294A
RDS(on):
2.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF
Input Capacitance(Ciss):
11.55nF
Pd - Power Dissipation:
417W
Gate Charge(Qg):
172nC@10V
Mfr. Part #:
MSA001B
Package:
TO-263
Product Description
Product Overview
The MSA001B is an N-Channel Enhancement Mode MOSFET manufactured by Miracle Technology Co., Ltd. It offers a high voltage rating of 110V and a continuous drain current of 294A at 25C, with a low typical on-resistance of 2.0m at VGS = 10V. This MOSFET is designed for applications requiring excellent RDS(on) and low gate charge, featuring 100% EAS guaranteed performance. It is also halogen-free and RoHS-compliant, making it suitable for load switching, PWM applications, and power management systems.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: N-Channel Enhancement Mode MOSFET
- Compliance: Halogen-free; RoHS-compliant
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 110 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 294 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | 185.5 | A | |||
| IDM | Drain Current-Pulsed | 1175 | A | |||
| PD | Maximum Power Dissipation (TC = 25C) | 417 | W | |||
| EAS | Single Pulsed Avalanche Energy | 1502 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| RJC | Thermal Resistance, Junction to Case | 0.3 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 34 | C/W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 110 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 110V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.0 | - | 4.0 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 20A | - | 2.0 | 2.6 | m |
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 2.8 | - | |
| Ciss | Input Capacitance | VDS = 55V, VGS = 0V, f = 1.0MHz | - | 11.55 | - | nF |
| Coss | Output Capacitance | - | 1590 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 37 | - | pF | |
| td(on) | Turn-On Delay Time | VDD = 55V, VGS = 10V, ID = 20A RGEN = 6.2 | - | 50 | - | ns |
| tr | Turn-On Rise Time | - | 76 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 143 | - | ns | |
| tf | Turn-Off Fall Time | - | 84 | - | ns | |
| Qg | Total Gate Charge | VDS = 55V, VGS = 0 to 10V, ID = 20A | - | 172 | - | nC |
| Qgs | Gate-Source Charge | - | 57 | - | nC | |
| Qgd | Gate-Drain Charge | - | 40 | - | nC | |
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 294 | A |
| ISM | Maximum Pulsed Current | - | - | 1175 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 20A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 104 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 351 | - | nC |
2504151445_MIRACLE-POWER-MSA001B_C47361208.pdf
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