High voltage N Channel Power MOSFET MIRACLE POWER MPW04NA5 with 4A continuous current and low RDS ON resistance

Key Attributes
Model Number: MPW04NA5
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
4A
RDS(on):
4.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
16pF
Input Capacitance(Ciss):
2.646nF
Output Capacitance(Coss):
150pF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
49nC@10V
Mfr. Part #:
MPW04NA5
Package:
TO-3PH
Product Description

Product Overview

The MPW04NA5 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. It features a high breakdown voltage of 1500V and a continuous drain current of 4A. This MOSFET offers low ON resistance (RDS(ON) Typ. = 3.5 @ VGS = 10V), fast switching, low gate charge, and is 100% tested for single pulse avalanche energy. It is ideally suited for power switch circuits in adaptors and chargers.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Power MOSFET
  • Model Number: MPW04NA5

Technical Specifications

Parameter Condition Min. Typ. Max. Unit
Features
Voltage - 1500 - - V
Current - - 4 - A
RDS(ON) (Typ.) VGS = 10V - 3.5 -
Absolute Maximum Ratings
Drain-Source Voltage (VDS) - - - 1500 V
Gate-Source Voltage (VGS) - - - 30 V
Drain Current-Continuous (TC = 25C) (ID) - - - 4 A
Drain Current-Continuous (TC = 100C) (ID) - - - 2.4 A
Drain Current-Pulsed (IDM) - - - 16 A
Maximum Power Dissipation (PD) @ TJ = 25C - - - 39 W
Single Pulsed Avalanche Energy (EAS) - - - 110 mJ
Operating and Store Temperature Range (TJ, TSTG) - -55 - 150 C
Thermal Characteristics
Thermal Resistance, Junction-Case (RJC) Max. - - 3.2 C/W
Thermal Resistance Junction-Ambient (RJA) Max. - - 62.5 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
Drain-Source Breakdown Voltage (BVDSS) VGS = 0V, ID = 250A 1500 - - V
Zero Gate Voltage Drain Current (IDSS) VDS = 1500V, VGS = 0V - - 1 A
Forward Gate Body Leakage Current (IGSS) VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
Gate Threshold Voltage (VGS(th)) VDS = VGS, ID = 250A 3 - 5 V
Static Drain-Source On-Resistance (RDS(on)) VGS = 10V, ID = 2A - 3.5 4.5
Dynamic Characteristics
Input Capacitance (Ciss) VDS = 25V, VGS = 0V, f = 1.0MHz - 2646 - pF
Output Capacitance (Coss) - - 150 - pF
Reverse Transfer Capacitance (Crss) - - 16 - pF
Switching Characteristics
Turn-On Delay Time (td(on)) VDD = 750V, ID = 4A, RG = 25 - 49.8 - ns
Turn-On Rise Time (tr) - - 42.5 - ns
Turn-Off Delay Time (td(off)) - - 85 - ns
Turn-Off Fall Time (tf) - - 56.2 - ns
Total Gate Charge (Qg) VDD = 750V, ID = 4A, VGS = 10V - 49 - nC
Gate-Source Charge (Qgs) - - 13 - nC
Gate-Drain Charge (Qgd) - - 19 - nC
Drain-Source Diode Characteristics
Drain-Source Diode Forward Continuous Current (IS) VGS = 0V - - 4 A
Maximum Pulsed Current (ISM) VGS = 0V - - 16 A
Drain-Source Diode Forward Voltage (VSD) VGS = 0V, IS = 4A - - 1.4 V
Reverse Recovery Time (trr) IS=4A, Tj = 25, dIF/dt=100A/us, VGS=0V - 896 - ns
Reverse Recovery Charge (Qrr) - - 8.5 - uC
Package Information (Dimensions in mm)
Symbol Min Nom Max
A 5.35 5.55 5.75
A1 2.80 3.00 3.20
A2 1.90 2.10 2.30
A3 1.00 1.20 1.40
b 0.80 0.90 1.00
b1 1.80 2.00 2.20
b2 1.80 2.00 2.20
c 0.70 0.90 1.10
e 5.25 5.45 5.65
E 15.2 15.4 15.6
E1 9.80 10.0 10.2
E2 3.80 4.00 4.20
G 4.3 4.5 4.7
H 24.3 24.5 24.7
H1 9.80 10.0 10.2
H2 14.3 14.5 14.7
H3 18.5 19.0 19.5
H4 2.00 2.20 2.40
H5 24.0 24.5 25.0
P 3.30 3.50 3.70

2504151445_MIRACLE-POWER-MPW04NA5_C47361032.pdf

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