High voltage N Channel Power MOSFET MIRACLE POWER MPW04NA5 with 4A continuous current and low RDS ON resistance
Product Overview
The MPW04NA5 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. It features a high breakdown voltage of 1500V and a continuous drain current of 4A. This MOSFET offers low ON resistance (RDS(ON) Typ. = 3.5 @ VGS = 10V), fast switching, low gate charge, and is 100% tested for single pulse avalanche energy. It is ideally suited for power switch circuits in adaptors and chargers.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Model Number: MPW04NA5
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Features | |||||
| Voltage | - | 1500 | - | - | V |
| Current | - | - | 4 | - | A |
| RDS(ON) (Typ.) | VGS = 10V | - | 3.5 | - | |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | - | - | - | 1500 | V |
| Gate-Source Voltage (VGS) | - | - | - | 30 | V |
| Drain Current-Continuous (TC = 25C) (ID) | - | - | - | 4 | A |
| Drain Current-Continuous (TC = 100C) (ID) | - | - | - | 2.4 | A |
| Drain Current-Pulsed (IDM) | - | - | - | 16 | A |
| Maximum Power Dissipation (PD) @ TJ = 25C | - | - | - | 39 | W |
| Single Pulsed Avalanche Energy (EAS) | - | - | - | 110 | mJ |
| Operating and Store Temperature Range (TJ, TSTG) | - | -55 | - | 150 | C |
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-Case (RJC) | Max. | - | - | 3.2 | C/W |
| Thermal Resistance Junction-Ambient (RJA) | Max. | - | - | 62.5 | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 1500 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 1500V, VGS = 0V | - | - | 1 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A | 3 | - | 5 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 2A | - | 3.5 | 4.5 | |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 2646 | - | pF |
| Output Capacitance (Coss) | - | - | 150 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 16 | - | pF |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 750V, ID = 4A, RG = 25 | - | 49.8 | - | ns |
| Turn-On Rise Time (tr) | - | - | 42.5 | - | ns |
| Turn-Off Delay Time (td(off)) | - | - | 85 | - | ns |
| Turn-Off Fall Time (tf) | - | - | 56.2 | - | ns |
| Total Gate Charge (Qg) | VDD = 750V, ID = 4A, VGS = 10V | - | 49 | - | nC |
| Gate-Source Charge (Qgs) | - | - | 13 | - | nC |
| Gate-Drain Charge (Qgd) | - | - | 19 | - | nC |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | VGS = 0V | - | - | 4 | A |
| Maximum Pulsed Current (ISM) | VGS = 0V | - | - | 16 | A |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = 4A | - | - | 1.4 | V |
| Reverse Recovery Time (trr) | IS=4A, Tj = 25, dIF/dt=100A/us, VGS=0V | - | 896 | - | ns |
| Reverse Recovery Charge (Qrr) | - | - | 8.5 | - | uC |
| Package Information (Dimensions in mm) | |||
|---|---|---|---|
| Symbol | Min | Nom | Max |
| A | 5.35 | 5.55 | 5.75 |
| A1 | 2.80 | 3.00 | 3.20 |
| A2 | 1.90 | 2.10 | 2.30 |
| A3 | 1.00 | 1.20 | 1.40 |
| b | 0.80 | 0.90 | 1.00 |
| b1 | 1.80 | 2.00 | 2.20 |
| b2 | 1.80 | 2.00 | 2.20 |
| c | 0.70 | 0.90 | 1.10 |
| e | 5.25 | 5.45 | 5.65 |
| E | 15.2 | 15.4 | 15.6 |
| E1 | 9.80 | 10.0 | 10.2 |
| E2 | 3.80 | 4.00 | 4.20 |
| G | 4.3 | 4.5 | 4.7 |
| H | 24.3 | 24.5 | 24.7 |
| H1 | 9.80 | 10.0 | 10.2 |
| H2 | 14.3 | 14.5 | 14.7 |
| H3 | 18.5 | 19.0 | 19.5 |
| H4 | 2.00 | 2.20 | 2.40 |
| H5 | 24.0 | 24.5 | 25.0 |
| P | 3.30 | 3.50 | 3.70 |
2504151445_MIRACLE-POWER-MPW04NA5_C47361032.pdf
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