Power Switching MOSFET MIRACLE POWER MU6001T Featuring 60V Voltage and 320mA Continuous Drain Current
Key Attributes
Model Number:
MU6001T
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
320mA
Operating Temperature -:
-
RDS(on):
3.2Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
12pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
35pF
Gate Charge(Qg):
800pC@5V
Mfr. Part #:
MU6001T
Package:
SOT-23
Product Description
Product Overview
The MU6001T is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 60V drain-source voltage, a continuous drain current of 320mA, and a low on-resistance of 2.2 (typ.) at VGS = 10V. This MOSFET offers very low leakage current in the off condition and is ESD protected up to 2KV HBM. It is suitable for power switching applications, hard switched, and high-frequency circuits.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Package: SOT-23
- Marking: 702K2
Technical Specifications
| Symbol | Parameter | Test Condition | Limit/Value | Unit |
|---|---|---|---|---|
| Features | ||||
| Voltage | 60 | V | ||
| Current | 0.32 | A | ||
| RDS(ON))(Typ.) | VGS = 10V | 2.2 | ||
| Leakage Current | In Off Condition | Very Low | ||
| ESD Protection | HBM | 2 | KV | |
| Absolute Maximum Ratings | ||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 60 | V |
| VGS | Gate-Source Voltage | 20 | V | |
| ID | Drain Current-Continuous | TA =25C | 320 | mA |
| IDM | Drain Current-Pulsed | a | 2000 | mA |
| PD | Maximum Power Dissipation | @ TA =25C | 350 | mW |
| TSTG | Store Temperature Range | -55 to 150 | C | |
| Thermal Characteristics | ||||
| RJA | Thermal Resistance Junction-Ambient | Maxc | 357 | C/W |
| Electrical Characteristics | ||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 60 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 60V, VGS = 0V | - | 1 A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | 10 A |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 1.0 - 2.1 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS =5V, ID =50mA | - | 2.8 |
| VGS =4.5V,ID =200mA | - | 3.2 | ||
| VGS =10V, ID =500mA | - | 3.0 | ||
| gfs | Forward Transconductance | VDS=15V, ID=250mA | 300 | mS |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 35 pF |
| Coss | Output Capacitance | - | 12 pF | |
| Crss | Reverse Transfer Capacitance | - | 7 pF | |
| td(on) | Turn-On Delay Time | VDD=30V, RL=150, ID=200mA, RG=10, VGS =10V | - | 6 ns |
| td(off) | Turn-Off Delay Time | - | 13 ns | |
| Qg | Total Gate Charge | VDS =15V, ID=200mA, VGS = 5V | - | 0.8 nC |
| Drain-Source Diode Characteristics | ||||
| VSD | Diode Forward Voltage | VGS = 0V, ISD = 1A | - | 1.1 V |
| Is | Continuous Source Current | - | 300 mA | |
2410122015_MIRACLE-POWER-MU6001T_C17702014.pdf
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