Minos IRF9530NS MNS P Channel Power MOSFET featuring low RDS ON and high avalanche energy capability
Key Attributes
Model Number:
IRF9530NS-MNS
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+175℃
RDS(on):
70mΩ@10V;80mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
67pF
Pd - Power Dissipation:
72W
Input Capacitance(Ciss):
2.36nF
Output Capacitance(Coss):
81pF
Gate Charge(Qg):
71nC@10V
Mfr. Part #:
IRF9530NS-MNS
Package:
TO-263
Product Description
Product Overview
The IRF9530NS is a P-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key features include a VDS of -100V, ID of -20A, and low RDS(ON) values of <80m @ VGS=-10V and <90m @ VGS=-4.5V. The device boasts a high-density cell design, fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. Its excellent package design ensures good heat dissipation.
Product Attributes
- Brand: MNS-KX (implied by website)
- Origin: Shenzhen, China (implied by contact information)
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| VDS | Drain-Source Voltage | -100 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID | Drain Current-Continuous | -20 | A | ||
| IDM | Drain Current-Pulsed (Note 1) | -20 | A | ||
| PD | Maximum Power Dissipation(TA=25) | 72 | W | ||
| EAS | Single pulse avalanche energy(Note 2) | 80 | mJ | ||
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 | 175 | ||
| RJC | Thermal Resistance,Junction-to-Case | 2.12 | /W | ||
| Electrical Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=-250µA) | -100 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VDS=-100V,VGS=0V) | -1 µA | |||
| IGSS | Gate-Body Leakage Current (VGS=±20V,VDS=0V) | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage (VDS=VGS,ID=-250µA) | -1.0 | -2.4 | V | |
| RDS(ON) | Drain-Source On-State Resistance (Note 3) (VGS=-10V, ID=-10A) | 70 | 80 | mΩ | |
| RDS(ON) | Drain-Source On-State Resistance (Note 3) (VGS=-4.5V, ID=-10A) | 80 | 90 | mΩ | |
| gFS | Forward Transconductance (VDS=-50V,ID=-10A) | 7.2 | S | ||
| Dynamic Characteristics | |||||
| Clss | Input Capacitance (VDS=-50V,VGS=0V, f=1.0MHz) | 2360 | pF | ||
| Coss | Output Capacitance | 81 | pF | ||
| Crss | Reverse Transfer Capacitance | 67 | pF | ||
| Switching Characteristics (Note 4) | |||||
| td(on) | Turn-on Delay Time (VDD=-50V, ID=-20A, VGS=-10V,RGEN=10Ω) | 20 | nS | ||
| tr | Turn-on Rise Time | 11 | nS | ||
| td(off) | Turn-Off Delay Time | 100 | nS | ||
| tf | Turn-Off Fall Time | 38 | nS | ||
| Qg | Total Gate Charge (VDS=-50V,ID=-16A, VGS=-10V) | 71 | nC | ||
| Qgs | Gate-Source Charge | 13 | nC | ||
| Qgd | Gate-Drain Charge | 13 | nC | ||
| Drain-Source Diode Characteristics | |||||
| VSD | Diode Forward Voltage (VGS=0V,IS=-10A) | -1.2 | V | ||
2506121200_Minos-IRF9530NS-MNS_C49108781.pdf
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