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quality 650V 12A N Channel MOSFET MIRACLE POWER MPP12N65 Designed for LCD Panel Power and Switching Supplies factory
quality 650V 12A N Channel MOSFET MIRACLE POWER MPP12N65 Designed for LCD Panel Power and Switching Supplies factory

650V 12A N Channel MOSFET MIRACLE POWER MPP12N65 Designed for LCD Panel Power and Switching Supplies

Key Attributes
Model Number: MPP12N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-
RDS(on):
800mΩ@10V,6A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
9.6pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.78nF
Pd - Power Dissipation:
120W
Output Capacitance(Coss):
162pF
Gate Charge(Qg):
40.2nC@10V
Mfr. Part #:
MPP12N65
Package:
PTO-252
Product Description

Product Overview

The MPP12N65 is a 650V, 12A N-Channel Power MOSFET from Miracle Technology Co., Ltd. Engineered with Miracle Technology, it features a low Crss, fast switching speeds, and is 100% avalanche tested. This MOSFET is ideal for applications such as adapters, LCD panel power, E-bike chargers, and switching mode power supplies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Miracle Technology
  • Channel Type: N-Channel
  • Testing: 100% Avalanche Tested

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(ON) VGS = 10V 0.65
650V, 12A
Low Crss
Fast Switching
Absolute Maximum Ratings
VDS Drain-Source Voltage TC = 25C unless otherwise noted 650 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous, TC =25C 12 A
ID Drain Current-Continuous, TC =100C 7.5 A
IDM Drain Current-Pulsed b 48 A
PD Maximum Power Dissipation @ TJ =25C 120 W
EAS Single Pulsed Avalanche Energy d 500 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction-Case 1.04 C/W
RJA Thermal Resistance Junction-Ambient 62.5 C/W
Electrical Characteristics
TJ = 25C unless otherwise noted
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 650 - - V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 2 - 4 V
RDS(on) Static Drain-Source On- Resistance c VGS = 10V, ID =6A - 0.65 0.80
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 1780 - pF
Coss Output Capacitance - 162 - pF
Crss Reverse Transfer Capacitance - 9.6 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 325V, ID =12A, RG = 10,VGS=10V - 29 - ns
tr Turn-On Rise Time - 27 - ns
td(off) Turn-Off Delay Time - 65 - ns
tf Turn-Off Fall Time - 46 - ns
Qg Total Gate Charge VDS = 520V, ID =12A, VGS = 10V - 40.2 - nC
Qgs Gate-Source Charge - 10.3 - nC
Qgd Gate-Drain Charge - 14.4 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 12 A
ISM Maximum Pulsed Current VGS = 0V - - 48 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 12A - - 1.5 V
trr Reverse Recovery Time IS=12A, Tj = 25 dIF/dt=100A/us, VGS=0V - 650 - ns
Qrr Reverse Recovery Charge - 4.29 - nC

2410122015_MIRACLE-POWER-MPP12N65_C17701988.pdf

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