Low On Resistance 650V 16A N Channel MOSFET MIRACLE POWER MPF16N65 for Switching Mode Power Supplies
Key Attributes
Model Number:
MPF16N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
16A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@10V,8.0A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.43nF
Pd - Power Dissipation:
70W
Output Capacitance(Coss):
215pF
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
MPF16N65
Package:
TO-220F
Product Description
MPF16N65 N-Channel Power MOSFET
Product Overview
The MPF16N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. Featuring a 650V breakdown voltage, 16A continuous drain current, and a low on-resistance of 0.55 (Max.) at VGS = 10V, this MOSFET offers fast switching speeds and 100% avalanche tested reliability. It is ideal for use in adapters, standby power supplies, and switching mode power supplies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Miracle Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage Rating | 650 | V | ||||
| Current Rating (Continuous, TC=25C) | 16 | A | ||||
| RDS(ON) | Static Drain-Source On-Resistance | VGS = 10V, ID = 8.0A | - | 0.45 | 0.55 | |
| Low Crss | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | - | - | 650 | V | |
| VGS | Gate-Source Voltage | - | - | 30 | V | |
| ID | Drain Current-Continuous, TC =25C | - | - | 16 | A | |
| ID | Drain Current-Continuous, TC =100C | - | - | 10.6 | A | |
| IDM | Drain Current-Pulsed | - | - | 64 | A | |
| PD | Maximum Power Dissipation @ TJ =25C | - | - | 70 | W | |
| EAS | Single Pulsed Avalanche Energy | L=10mH, VDD=50V,Ias=11.0A,RG=25, Starting TJ=25 | - | - | 605 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | -55 | - | 150 | C | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | - | - | 1.79 | C/W | |
| RJA | Thermal Resistance Junction-Ambient | - | - | 100 | C/W | |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 8.0A | - | 0.45 | 0.55 | |
| Dynamic Characteristics | ||||||
| gfs | Forward Transconductance | VDS = 15V, ID = 8.0A | - | 15 | - | S |
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 2430 | - | pF |
| Coss | Output Capacitance | - | 215 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 18 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325V, ID = 16A, RG = 25, VGS=10V | - | 28 | - | ns |
| tr | Turn-On Rise Time | - | 68 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 142 | - | ns | |
| tf | Turn-Off Fall Time | - | 73 | - | ns | |
| Qg | Total Gate Charge | VDS = 325V, ID = 16A, VGS = 10V | - | 53 | - | nC |
| Qgs | Gate-Source Charge | - | 11 | - | nC | |
| Qgd | Gate-Drain Charge | - | 23 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 16 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 64 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 16A | - | 0.9 | 1.4 | V |
2410122015_MIRACLE-POWER-MPF16N65_C17701994.pdf
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