86--136 6733 2386
quality N Channel Enhancement Mode MOSFET MIRACLE POWER MSB002Y with 120V Drain Source Voltage and 90A Current factory
quality N Channel Enhancement Mode MOSFET MIRACLE POWER MSB002Y with 120V Drain Source Voltage and 90A Current factory

N Channel Enhancement Mode MOSFET MIRACLE POWER MSB002Y with 120V Drain Source Voltage and 90A Current

Key Attributes
Model Number: MSB002Y
Product Custom Attributes
Drain To Source Voltage:
120V
Current - Continuous Drain(Id):
90A
RDS(on):
9.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Input Capacitance(Ciss):
4.619nF
Output Capacitance(Coss):
924pF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MSB002Y
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The MSB002Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 120V drain-source voltage, 90A continuous drain current, and a low on-resistance of 6.0m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, utilizing advanced trench technology and is 100% EAS guaranteed. It is designed for applications such as DC/DC converters, high-frequency switching, and synchronous rectification.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Advanced Trench Technology
  • Packaging: PDFN5*6

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(on) VGS = 10V - 6.0 - m
Drain-Source Voltage - - - 120 V
Drain Current-Continuous TC = 25C - - 90 A
Drain Current-Continuous TC = 100C - - 58 A
Drain Current-Pulsed - - - 360 A
Maximum Power Dissipation TC = 25C - - 125 W
Single Pulsed Avalanche Energy - - 324 - mJ
Operating and Store Temperature Range - -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - 1.0 - C/W
RJA Thermal Resistance, Junction to Ambient - - 48 - C/W
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 120 - - V
IDSS Zero Gate Voltage Drain Current VDS = 120V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.5 2.0 2.5 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 30A - 6.0 7.2 m
RDS(on) Static Drain-Source On- Resistance VGS = 4.5V, ID = 20A - 7.4 9.5 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - TBD -
Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 1.0MHz - 4619 - pF
Coss Output Capacitance - - 924 - pF
Crss Reverse Transfer Capacitance - - 35 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 50V, VGS = 10V, ID = 20A, RGEN = 2.2 - 13 - ns
tr Turn-On Rise Time - - 25 - ns
td(off) Turn-Off Delay Time - - 38 - ns
tf Turn-Off Fall Time - - 34 - ns
Qg Total Gate Charge VDS = 20V, VGS = 0 to 10V, ID = 20A - 40 - nC
Qgs Gate-Source Charge - - 9.0 - nC
Qgd Gate-Drain Charge - - 10 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 90 A
ISM Maximum Pulsed Current - - - 360 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 1A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 15A, dIF/dt = 100A/s - 65 - ns
Qrr Body Diode Reverse Recovery Charge IF = 15A, dIF/dt = 100A/s - 70 - nC

2504151445_MIRACLE-POWER-MSB002Y_C47361212.pdf

Related Products
quality High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant factory
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
quality complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities factory
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
quality Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control factory
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
quality YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages factory
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.