N Channel Enhancement Mode MOSFET MIRACLE POWER MU6002D with RoHS Compliance and Halogen Free Design
Key Attributes
Model Number:
MU6002D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
16mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
96pF
Input Capacitance(Ciss):
2.66nF
Output Capacitance(Coss):
119pF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
MU6002D
Package:
TO-252
Product Description
Product Overview
The MU6002D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It offers a 60V breakdown voltage and a continuous drain current of 50A, with a typical on-resistance of 12m at VGS = 10V. This MOSFET is designed for excellent RDS(on) and low gate charge, featuring 100% EAS guaranteed performance. It is a halogen-free and RoHS-compliant component suitable for load switching, PWM applications, and power management.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Miracle Technology
- Compliance: Halogen-free; RoHS-compliant
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | |||
| Drain Current-Continuous (ID) | TC = 25C | 50 | A | ||
| Drain Current-Continuous (ID) | TC = 100C | 31 | A | ||
| Drain Current-Pulsed (IDM) | 198 | A | |||
| Maximum Power Dissipation (PD) | TC = 25C | 40 | W | ||
| Single Pulsed Avalanche Energy (EAS) | 100 | mJ | |||
| Operating and Store Temperature Range (TJ, TSTG) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) | 3.1 | C/W | |||
| Thermal Resistance, Junction to Ambient (RJA) | 49 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 60V, VGS = 0V | - | - | 1.0 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A | 1.0 | - | 2.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 30A | - | 12 | 16 | m |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 4.5V, ID = 20A | - | 14 | 18 | m |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VDS = VGS = 0V, f = 1.0MHz | - | 2.4 | - | |
| Input Capacitance (Ciss) | VDS = 30V, VGS = 0V, f = 1.0MHz | - | 2660 | - | pF |
| Output Capacitance (Coss) | - | 119 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 96 | - | pF | |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 30V, VGS = 10V, ID = 30A, RGEN = 3.0 | - | 9.0 | - | ns |
| Turn-On Rise Time (tr) | - | 31 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 44 | - | ns | |
| Turn-Off Fall Time (tf) | - | 8.0 | - | ns | |
| Total Gate Charge (Qg) | VDS = 30V, VGS = 0 to 10V, ID = 30A | - | 50 | - | nC |
| Gate-Source Charge (Qgs) | - | 10 | - | - | |
| Gate-Drain Charge (Qgd) | - | 9.0 | - | - | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | VG = VD = 0V, Force Current | - | - | 50 | A |
| Maximum Pulsed Current (ISM) | - | - | 198 | A | |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Body Diode Reverse Recovery Time (Trr) | IF = 30A, dIF/dt = 100A/s | - | 22 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | IF = 30A, dIF/dt = 100A/s | - | 25.2 | - | nC |
2504151445_MIRACLE-POWER-MU6002D_C47361191.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
