Power Switching Device Minos MPG150N10P N Channel MOSFET with Low Gate Charge and High EAS Stability
Key Attributes
Model Number:
MPG150N10P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
330A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
1 N-channel
Input Capacitance(Ciss):
6.6nF
Pd - Power Dissipation:
211W
Gate Charge(Qg):
108nC@10V
Mfr. Part #:
MPG150N10P
Package:
TO-220
Product Description
Product Overview
The MPG150N10 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability with high EAS. The package is designed for effective heat dissipation.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 330 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 720 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 211 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 1200 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.36 | /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=50A | - | 5 | 6 | mΩ |
| Forward Transconductance | gFS | VDS=10V,ID=40A | 170 | - | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 6600 | - | pF |
| Output Capacitance | Coss | - | 590 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 210 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=20A, VGS=10V,RGEN=3Ω | - | 29 | - | nS |
| Turn-on Rise Time | tr | - | 23 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 44 | - | nS | |
| Turn-Off Fall Time | tf | - | 15 | - | nS | |
| Total Gate Charge | Qg | VDS=50V,ID=30A, VGS=10V | - | 108 | - | nC |
| Gate-Source Charge | Qgs | - | 29 | - | nC | |
| Gate-Drain Charge | Qg | - | 40 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=50A | - | - | 1.2 | V |
| Ordering Information | ||||||
| Ordering Codes | Package | Product Code | Packing | |||
| TO-220 | MPG150N10P | Tube | ||||
| TO-263 | MPG150N10S | Tape Reel | ||||
2410122013_Minos-MPG150N10P_C5452767.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
