N Channel Enhancement Mode MOSFET MIRACLE POWER MU3011D Ideal for PWM Applications and Power Control
Key Attributes
Model Number:
MU3011D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
RDS(on):
4.4mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
220pF
Number:
1 N-channel
Output Capacitance(Coss):
264pF
Pd - Power Dissipation:
46W
Input Capacitance(Ciss):
2.247nF
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
MU3011D
Package:
TO-252
Product Description
Product Overview
The MU3011D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 30V drain-source voltage, 90A continuous drain current, and a low typical on-resistance of 3.4m at VGS = 10V. This MOSFET utilizes advanced trench technology, offering excellent RDS(ON) and low gate charge. It is suitable for applications such as load switching, PWM applications, and power management.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Trench Technology
- Mode: N-Channel Enhancement Mode
- Lead Free: Yes
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 90 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | 58 | A | |||
| IDM | Drain Current-Pulsed | 360 | A | |||
| PD | Maximum Power Dissipation (@ TJ = 25C) | 46 | W | |||
| EAS | Single Pulsed Avalanche Energy | 132 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 2.7 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 34 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 30V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.1 | 1.6 | 2.1 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 30A | - | 3.4 | 4.4 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 20A | - | 4.9 | 6.4 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 15V, VGS = 0V, f = 1MHz | - | 2247 | - | pF |
| Coss | Output Capacitance | - | 264 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 220 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 15V, VGS = 10V, ID = 30A, RGEN= 3 | - | 8 | - | ns |
| tr | Turn-On Rise Time | - | 16 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 40 | - | ns | |
| tf | Turn-Off Fall Time | - | 13 | - | ns | |
| Qg | Total Gate Charge | VDS = 15V, VGS = 0 to 10V, ID = 30A | - | 45 | - | nC |
| Qgs | Gate-Source Charge | - | 8.1 | - | nC | |
| Qgd | Gate-Drain Charge | - | 10.2 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 90 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 360 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, di/dt = 100A/s | - | 12 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, di/dt = 100A/s | - | 3.6 | - | nC |
2408011701_MIRACLE-POWER-MU3011D_C34373749.pdf
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