P Channel Enhancement Mode MOSFET MIRACLE POWER MU2002X with 20V Drain Source Voltage and 55A Current

Key Attributes
Model Number: MU2002X
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
55A
RDS(on):
6.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
500pF
Output Capacitance(Coss):
568pF
Input Capacitance(Ciss):
4.768nF
Pd - Power Dissipation:
68W
Gate Charge(Qg):
56.1nC@10V
Mfr. Part #:
MU2002X
Package:
PDFN-8L(3.3x3.3)
Product Description

Product Overview

The MU2002X is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Designed for high power and current handling, this MOSFET features a -20V drain-source voltage and a continuous drain current of -55A at 25C. It is suitable for applications such as load switching and PWM control. The product is 100% UIS and DVDS tested and is lead-free.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: P-Channel Enhancement Mode MOSFET
  • Series: MU2002X
  • Certifications: Lead free product is acquired

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted -20 V
VGS Gate-Source Voltage 12 V
ID Drain Current-Continuous TC = 25C -55 A
ID Drain Current-Continuous TC = 100C -35 A
IDM Drain Current-Pulsed -220 A
PD Maximum Power Dissipation TC = 25C 68 W
EAS Single Pulsed Avalanche Energy 100 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 1.85 C/W
RJA Thermal Resistance, Junction to Ambient TBD C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250A -20 V
IDSS Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V -1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 12V 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250A -0.5 -0.85 -1.0 V
RDS(on) Static Drain-Source On-Resistance VGS = -4.5V, ID = -15A 5.2 6.5 m
RDS(on) Static Drain-Source On-Resistance VGS = -2.5V, ID = -12A 7.8 10.0 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz 10.5
Ciss Input Capacitance VDS = -10V, VGS = 0V, f = 1.0MHz 4768 pF
Coss Output Capacitance 568 pF
Crss Reverse Transfer Capacitance 500 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = -10V, VGS = -10V, ID = -13A, RGEN = 2.7 11 ns
tr Turn-On Rise Time 108 ns
td(off) Turn-Off Delay Time 158 ns
tf Turn-Off Fall Time 159 ns
Qg Total Gate Charge VDS = -10V, VGS = -4.5V, ID = -15A 56.1 nC
Qgs Gate-Source Charge 8.2
Qgd Gate-Drain Charge 15.8
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current -55 A
ISM Maximum Pulsed Current -220 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = -5A 0.78 1.2 V
Trr Body Diode Reverse Recovery Time IF = -15A, dIF/dt = -100A/s 23.1 ns
Qrr Body Diode Reverse Recovery Charge IF = -15A, dIF/dt = -100A/s 14.1 nC
Package Information PDFN33
Symbol Min Typ Max
A 0.725 0.775 0.825
B 0.28 0.38 0.48
C 0.13 0.15 0.20
D 3.05 3.15 3.25
D1 0.10
E 3.25 3.35 3.45
E1 3.0 3.1 3.2
e 0.60 0.65 0.70
F 0.25 0.30 0.35
H 1.63 1.73 1.83
L 2.35 2.45 2.55

2504151445_MIRACLE-POWER-MU2002X_C47361158.pdf

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