P Channel Enhancement Mode MOSFET MIRACLE POWER MU2002X with 20V Drain Source Voltage and 55A Current
Product Overview
The MU2002X is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Designed for high power and current handling, this MOSFET features a -20V drain-source voltage and a continuous drain current of -55A at 25C. It is suitable for applications such as load switching and PWM control. The product is 100% UIS and DVDS tested and is lead-free.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: P-Channel Enhancement Mode MOSFET
- Series: MU2002X
- Certifications: Lead free product is acquired
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | -20 | V | ||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID | Drain Current-Continuous | TC = 25C | -55 | A | ||
| ID | Drain Current-Continuous | TC = 100C | -35 | A | ||
| IDM | Drain Current-Pulsed | -220 | A | |||
| PD | Maximum Power Dissipation | TC = 25C | 68 | W | ||
| EAS | Single Pulsed Avalanche Energy | 100 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.85 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | TBD | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250A | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -20V, VGS = 0V | -1.0 | A | ||
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 12V | 100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = -250A | -0.5 | -0.85 | -1.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = -4.5V, ID = -15A | 5.2 | 6.5 | m | |
| RDS(on) | Static Drain-Source On-Resistance | VGS = -2.5V, ID = -12A | 7.8 | 10.0 | m | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | 10.5 | |||
| Ciss | Input Capacitance | VDS = -10V, VGS = 0V, f = 1.0MHz | 4768 | pF | ||
| Coss | Output Capacitance | 568 | pF | |||
| Crss | Reverse Transfer Capacitance | 500 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = -10V, VGS = -10V, ID = -13A, RGEN = 2.7 | 11 | ns | ||
| tr | Turn-On Rise Time | 108 | ns | |||
| td(off) | Turn-Off Delay Time | 158 | ns | |||
| tf | Turn-Off Fall Time | 159 | ns | |||
| Qg | Total Gate Charge | VDS = -10V, VGS = -4.5V, ID = -15A | 56.1 | nC | ||
| Qgs | Gate-Source Charge | 8.2 | ||||
| Qgd | Gate-Drain Charge | 15.8 | ||||
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | -55 | A | ||
| ISM | Maximum Pulsed Current | -220 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = -5A | 0.78 | 1.2 | V | |
| Trr | Body Diode Reverse Recovery Time | IF = -15A, dIF/dt = -100A/s | 23.1 | ns | ||
| Qrr | Body Diode Reverse Recovery Charge | IF = -15A, dIF/dt = -100A/s | 14.1 | nC | ||
| Package Information PDFN33 | ||||||
| Symbol | Min | Typ | Max | |||
| A | 0.725 | 0.775 | 0.825 | |||
| B | 0.28 | 0.38 | 0.48 | |||
| C | 0.13 | 0.15 | 0.20 | |||
| D | 3.05 | 3.15 | 3.25 | |||
| D1 | 0.10 | |||||
| E | 3.25 | 3.35 | 3.45 | |||
| E1 | 3.0 | 3.1 | 3.2 | |||
| e | 0.60 | 0.65 | 0.70 | |||
| F | 0.25 | 0.30 | 0.35 | |||
| H | 1.63 | 1.73 | 1.83 | |||
| L | 2.35 | 2.45 | 2.55 | |||
2504151445_MIRACLE-POWER-MU2002X_C47361158.pdf
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