Silicon N Channel Power MOSFET MPF20N50 with 500V Drain to Source Voltage and 20A Continuous Current
Key Attributes
Model Number:
MPF20N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
260mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
18pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.92nF@25V
Pd - Power Dissipation:
230W
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
MPF20N50
Package:
TO-220F
Product Description
Product Description
The MPF20N50 is a silicon N-Channel Enhanced Power MOSFET designed using advanced MOSFET technology. It offers reduced conduction loss, improved switching performance, and enhanced avalanche energy. This transistor is suitable for synchronous rectification, inverter systems, high-speed switching, and general-purpose applications.
Key Characteristics
- VDS=500V, ID=20A
- RDS(ON)<0.29 @VGS=10V
- Fast Switching
- Low Crss
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product
Applications
- High frequency switching mode power supply
Ordering Information
| Ordering Codes | Package | Product Code | Packing |
| MPF20N50 | TO-220F | MPF20N50 | Tube |
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| ABSOLUTE RATINGS | ||||||
| VDSS | Drain-to-Source Voltage | 500 | V | |||
| ID | Continuous Drain Current | TC = 25C | 20 | A | ||
| ID | Continuous Drain Current | TC = 100C | 12.6 | A | ||
| IDM | Pulsed Drain Current(Note1) | 80 | A | |||
| VGS | Gate-to-Source Voltage | 30 | V | |||
| EAS | Single Pulse Avalanche Energy(Note2) | 1200 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt(Note3) | 5.0 | V/ns | |||
| PD | Power Dissipation (TO-220, TO-3PN) | 230 | W | |||
| Derating Factor above 25C | 1.85 | W/ | ||||
| PD | Power Dissipation (TO-220F, TO-3PF) | 48 | W | |||
| Derating Factor above 25C | 0.38 | W/ | ||||
| TJTstg | Operating Junction and Storage Temperature Range | 55 | 150 | |||
| TL | Maximum Temperature for Soldering | 300 | ||||
| Thermal Characteristics (TO-220) | ||||||
| RJC | Junction-to-Case | 0.54 | /W | |||
| RJA | Junction-to-Ambient | 62.5 | /W | |||
| Thermal Characteristics (TO-220F) | ||||||
| RJC | Junction-to-Case | 2.6 | /W | |||
| RJA | Junction-to-Ambient | 62.5 | /W | |||
| OFF Characteristics | ||||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 500 | -- | -- | V |
| BVDSS/ TJ | Bvdss Temperature Coefficient | ID=250uA, Reference25 | -- | 0.6 | -- | V/ |
| IDSS | Drain to Source Leakage Current | VDS=500V, VGS= 0V, Tj = 25 | -- | -- | 10 | A |
| IDSS | Drain to Source Leakage Current | VDS=400V, VGS= 0V, Tj = 125 | -- | -- | 100 | A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | -- | -- | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -- | -- | -100 | nA |
| ON Characteristics | ||||||
| RDS(ON) | Drain-to-Source On- Resistance | VGS=10V, ID=10A(Note4) | -- | 0.26 | 0.29 | |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250A(Note4) | 2.0 | -- | 4.0 | V |
| gfs | Forward Transconductance | VDS=20V, ID =10A(Note4) | -- | 12 | -- | S |
| Dynamic Characteristics | ||||||
| Rg | Gate resistance | f = 1.0MHz | -- | 1.5 | -- | |
| Ciss | Input Capacitance | VGS = 0V VDS = 25V f = 1.0MHz | -- | 1920 | -- | PF |
| Coss | Output Capacitance | -- | 290 | -- | PF | |
| Crss | Reverse Transfer Capacitance | -- | 18 | -- | PF | |
| Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | ID =18A VDD = 250V VGS = 10V RG =20 | -- | 33 | -- | ns |
| tr | Rise Time | -- | 75 | -- | ns | |
| td(OFF) | Turn-Off Delay Time | -- | 91 | -- | ns | |
| tf | Fall Time | -- | 83 | -- | ns | |
| Qg | Total Gate Charge | ID =18A VDD =400V VGS = 10V | -- | 56 | -- | nC |
| Qgs | Gate to Source Charge | -- | 13 | -- | nC | |
| Qgd | Gate to Drain (Miller)Charge | -- | 20 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current (Body Diode) | TC=25 C | -- | -- | 20 | A |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 85 | A | |
| VSD | Diode Forward Voltage | IS=20A, VGS=0V(Note4) | -- | -- | 1.2 | V |
| Trr | Reverse Recovery Time | IS=20A, Tj = 25C dIF/dt=100A/us, VGS=0V | -- | 536 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 5668 | -- | nC | |
| Irrm | Reverse Recovery Current | -- | 21.1 | -- | A | |
2410122024_Minos-MPF20N50_C5352769.pdf
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