power MOSFET MIRACLE POWER MPF07N70 with 7A continuous current and low reverse transfer capacitances

Key Attributes
Model Number: MPF07N70
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
7A
RDS(on):
1.4Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.67pF
Number:
1 N-channel
Output Capacitance(Coss):
112pF
Pd - Power Dissipation:
43W
Input Capacitance(Ciss):
1.249nF
Gate Charge(Qg):
25.3nC
Mfr. Part #:
MPF07N70
Package:
TO-220F
Product Description

Product Overview

The MPF07N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for power switch circuits in adaptors and chargers. It features a 700V drain-source voltage, a continuous drain current of 7A, and a typical on-resistance of 1.18 at VGS = 10V. This MOSFET offers low gate charge, fast switching speeds, and is 100% tested for single pulse avalanche energy, making it suitable for efficient power conversion applications.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Power MOSFET
  • Technology: Miracle Technology

Technical Specifications

Symbol Parameter Test Condition Limit Unit
Features
Voltage 700 V
Current 7 A
RDS(ON)(Typ.) Static Drain-Source On-Resistance VGS = 10V 1.18
Low Gate Charge
Fast Switching
100% Single Pulse avalanche energy Test
Low Reverse transfer capacitances
Application
Power switch circuit of adaptor and charger
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
VDS Drain-Source Voltage 700 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous, TC =25C 7 A
ID Drain Current-Continuous, TC =100C 4.4 A
IDM Drain Current-Pulsed 28 A
PD Maximum Power Dissipation @ TJ =25C 43 W
EAS Single Pulsed Avalanche Energy 370 mJ
TJ, TSTG Operating and Store Temperature Range -55 to 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction-Case Max. 2.91 C/W
RJA Thermal Resistance Junction-Ambient Max. 62.5 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 700 V
IDSS Zero Gate Voltage Drain Current VDS = 700V, VGS = 0V 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 2 to 4 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID =3.5A 1.18 to 1.40
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz 1249 pF
Coss Output Capacitance 112 pF
Crss Reverse Transfer Capacitance 2.67 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 350V, ID =7A, RG = 10 16.5 ns
tr Turn-On Rise Time 28.6 ns
td(off) Turn-Off Delay Time 44.5 ns
tf Turn-Off Fall Time 29.6 ns
Qg Total Gate Charge VDS = 560V, ID =7A, VGS = 10V 25.3 nC
Qgs Gate-Source Charge 5.04 nC
Qgd Gate-Drain Charge 7.96 nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V 7 A
ISM Maximum Pulsed Current VGS = 0V 28 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A 1.5 V
trr Reverse Recovery Time IS=7A, Tj = 25, dIF/dt=100A/us, VGS=0V 472 ns
Qrr Reverse Recovery Charge 2.83 uC

2408011701_MIRACLE-POWER-MPF07N70_C34373721.pdf

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