Durable N Channel MOSFET MIRACLE POWER MS0004C with 100V Drain Source Voltage and 120A Drain Current
Key Attributes
Model Number:
MS0004C
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13.6pF
Output Capacitance(Coss):
660pF
Pd - Power Dissipation:
312W
Input Capacitance(Ciss):
4.025nF
Gate Charge(Qg):
50nC
Mfr. Part #:
MS0004C
Package:
TO-220
Product Description
Product Overview
The MS0004C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features 100V drain-source voltage and 120A continuous drain current with a typical on-resistance of 3.6m at VGS = 10V. This MOSFET offers ultra-low RDS(ON) and low gate charge, making it suitable for applications such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC (SR) sub-systems, and power management in telecom, industrial automation, and CE devices. It is halogen-free and RoHS-compliant, and 100% avalanche tested.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Halogen-free, RoHS-compliant
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous, TC =25C | 120 | A | |||
| IDM | Drain Current-Pulsed | b | 480 | A | ||
| PD | Maximum Power Dissipation @ TJ =25C | 312 | W | |||
| EAS | Single Pulsed Avalanche Energy | d | 576 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.4 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 45 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 100V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| RDS(on) | Static Drain-Source On-Resistance | c, VGS = 10V, ID = 50A | - | 3.6 | 4.5 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 2.5 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 1MHz | - | 4025 | - | pF |
| Coss | Output Capacitance | - | 660 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 13.6 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 50V, VGS = 10V, RL = 2.5, RGEN = 3 | - | 17 | - | ns |
| tr | Turn-On Rise Time | - | 37 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 68 | - | ns | |
| tf | Turn-Off Fall Time | - | 61 | - | ns | |
| Qgs | Gate-Source Charge | VDS = 50V, VGS = 0 to 10V, ID = 20A | - | 19 | - | nC |
| Qgd | Gate-Drain Charge | - | 19.4 | - | nC | |
| Qg | Total Gate Charge | - | 50 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | - | - | 120 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | - | - | 480 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 20A | - | 0.80 | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 94 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 242 | - | nC |
Notes:
a. TJ = +25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width 300s; duty cycle 2%
d. L = 0.5mH, VDD = 50V, IAS = 48A, RG = 25 Starting TJ = 25 .
2504151445_MIRACLE-POWER-MS0004C_C47361105.pdf
Related Products
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
