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quality MIRACLE POWER MJF08N80 N Channel Power MOSFET rated 800V and 8A for industrial electronic devices factory
quality MIRACLE POWER MJF08N80 N Channel Power MOSFET rated 800V and 8A for industrial electronic devices factory

MIRACLE POWER MJF08N80 N Channel Power MOSFET rated 800V and 8A for industrial electronic devices

Key Attributes
Model Number: MJF08N80
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
8A
RDS(on):
750mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@2250uA
Reverse Transfer Capacitance (Crss@Vds):
0.92pF
Input Capacitance(Ciss):
850.8pF
Output Capacitance(Coss):
34.4pF
Pd - Power Dissipation:
38W
Gate Charge(Qg):
18.5nC@10V
Mfr. Part #:
MJF08N80
Package:
TO-220F
Product Description

Product Overview

The MJF08N80 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for efficient and easy-to-control gate switching. Rated at 800V and 8A with a low typical on-resistance of 0.62 at VGS = 10V, this MOSFET is 100% avalanche tested. It is designed for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor forward topologies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: N-Channel Power MOSFET
  • Model: MJF08N80
  • Technology: Advanced Super Junction Technology
  • Testing: 100% Avalanche Tested

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
- Voltage, Current, RDS(on) VGS = 10V 800V 8A 0.62 -
Absolute Maximum Ratings
VDS Drain-Source Voltage TC = 25C unless otherwise noted - - 800 V
VGS Gate-Source Voltage - - - 30 V
ID Drain Current-Continuous TC = 25C - - 8 A
IDM Drain Current-Pulsed - - - 35 A
PD Maximum Power Dissipation TC = 25C - - 38 W
dv/dt Peak Diode Recovery dv/dt - - - 4 V/ns
EAS Single Pulsed Avalanche Energy - - - 151 mJ
TJ, TSTG Operating and Store Temperature Range - -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - - - 3.26 C/W
RJA Thermal Resistance, Junction to Ambient - - - 76 C/W
Electrical Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 800 - - V
IDSS Zero Gate Voltage Drain Current VDS = 800, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.8 - 4.2 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 6A - 0.62 0.75
RG Gate Resistance f = 1.0MHz - 25 -
Ciss Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz - 850.8 - pF
Coss Output Capacitance - - 34.4 - pF
Crss Reverse Transfer Capacitance - - 0.92 - pF
td(on) Turn-On Delay Time VDD = 400V, VGS = 10V, ID =4.1A, RG = 50 - 40.6 - ns
tr Turn-On Rise Time - - 34.8 - ns
td(off) Turn-Off Delay Time - - 128 - ns
tf Turn-Off Fall Time - - 31 - ns
Qg Total Gate Charge VDD = 400V, VGS = 0 to 10V, ID = 4.1A - 18.5 - nC
Qgs Gate-Source Charge - - 5 - -
Qgd Gate-Drain Charge - - 6.6 - -
VSD Drain-Source Diode Forward Voltage VGS = 0V, IF = 1A - 0.75 - V
Trr Body Diode Reverse Recovery Time VR = 400V, IF = 4.1A, dIF/dt = 100A/s - 266.5 - ns
Qrr Body Diode Reverse Recovery Charge VR = 400V, IF = 4.1A, dIF/dt = 100A/s - 2.2 - C
Irrm Peak reverse recovery current VR = 400V, IF = 4.1A, dIF/dt = 100A/s - 14 - A

2504151445_MIRACLE-POWER-MJF08N80_C47361098.pdf

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