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quality Power MOSFET MIRACLE POWER NPC830 with 500V Drain Source Voltage and Fast Switching Characteristics factory
quality Power MOSFET MIRACLE POWER NPC830 with 500V Drain Source Voltage and Fast Switching Characteristics factory

Power MOSFET MIRACLE POWER NPC830 with 500V Drain Source Voltage and Fast Switching Characteristics

Key Attributes
Model Number: NPC830
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
RDS(on):
1.35Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
4pF
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
580pF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
12.4nC@10V
Mfr. Part #:
NPC830
Package:
TO-220
Product Description

Product Overview

The MPC05N50/NPC830 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. Designed for high-voltage applications, it features a 500V drain-source voltage rating and a continuous drain current of 5A at 25C. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing, making it suitable for charger and standby power applications.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: MPC/NPC Series
  • Channel Type: N-Channel
  • Technology: Power MOSFET

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 500 V
VGS Gate-Source Voltage ±30 V
ID Drain Current-Continuous, TC =25C 5 A
ID Drain Current-Continuous, TC =100C 3.1 A
IDM Drain Current-Pulsed b 20 A
PD Maximum Power Dissipation @ TJ =25C 75 W
EAS Single Pulsed Avalanche Energy d 180 mJ
dv/dt Peak Diode Recovery dv/dt e 5.0 V/ns
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction-Case 1.67 C/W
RJA Thermal Resistance Junction-Ambient 62.5 C/W
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 500 - - V
IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = ±30V - - ±100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 2 - 4 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID =2.5A - 1.35 1.55
Dynamic Characteristics
gfs Forward Transconductance VDS=15V, ID =2.5A - 4 - S
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 580 - pF
Coss Output Capacitance - 60 - pF
Crss Reverse Transfer Capacitance - 4 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 250V, ID =5A, RG = 10,VGS=10V - 14 - ns
tr Turn-On Rise Time - 18 - ns
td(off) Turn-Off Delay Time - 31 - ns
tf Turn-Off Fall Time - 11 - ns
Qg Total Gate Charge VDS = 400V, ID =5A, VGS = 10V - 12.4 - nC
Qgs Gate-Source Charge - 3.1 - nC
Qgd Gate-Drain Charge - 4.8 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 5 A
ISM Maximum Pulsed Current VGS = 0V - - 20 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 5A - - 1.4 V
Trr Body Diode Reverse Recovery Time IF=5A,VGS=0V - 260 - ns
Qrr Reverse Recovery Charge di/dt=100A/us - 2.0 - uC

2505221638_MIRACLE-POWER-NPC830_C47361030.pdf

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