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quality N Channel Enhancement Mode MOSFET MIRACLE POWER MU3010D for PWM Applications and Load Switching factory
quality N Channel Enhancement Mode MOSFET MIRACLE POWER MU3010D for PWM Applications and Load Switching factory

N Channel Enhancement Mode MOSFET MIRACLE POWER MU3010D for PWM Applications and Load Switching

Key Attributes
Model Number: MU3010D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
RDS(on):
6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 N-channel
Output Capacitance(Coss):
225pF
Input Capacitance(Ciss):
1.788nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
34nC@10V
Mfr. Part #:
MU3010D
Package:
TO-252
Product Description

Product Overview

The MU3010D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Trench Technology. It offers a 30V drain-source voltage and 80A continuous drain current, featuring a low typical on-resistance of 4.2m at VGS = 10V. Designed for efficiency and performance, this lead-free MOSFET is ideal for load switching, PWM applications, and power management solutions.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Advanced Trench Technology
  • Mode: N-Channel Enhancement Mode
  • Lead Free: Yes

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous (TC = 25C) 80 A
ID Drain Current-Continuous (TC = 100C) 55 A
IDM Drain Current-Pulsed 320 A
PD Maximum Power Dissipation (@ TJ = 25C) 50 W
EAS Single Pulsed Avalanche Energy 110 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 2.5 C/W
RJA Thermal Resistance, Junction to Ambient 31 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 1.6 2.5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 30A - 4.2 6.0 m
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 20A - 6.4 9.5 m
Dynamic Characteristics
Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 1788 - pF
Coss Output Capacitance - 225 - pF
Crss Reverse Transfer Capacitance - 180 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 15V, VGS = 10V, ID = 30A, RGEN= 3 - 7 - ns
tr Turn-On Rise Time - 14 - ns
td(off) Turn-Off Delay Time - 34 - ns
tf Turn-Off Fall Time - 11 - ns
Qg Total Gate Charge VDS = 15V, VGS = 0 to 10V, ID = 30A - 34 - nC
Qgs Gate-Source Charge - 6.5 -
Qgd Gate-Drain Charge - 7.5 -
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current VGS = 0V - - 80 A
ISM Maximum Pulsed Drain- Source Diode Forward Current VGS = 0V - - 320 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, di/dt = 100A/s - 10 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, di/dt = 100A/s - 1.7 - nC

2408011701_MIRACLE-POWER-MU3010D_C34373748.pdf

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