Power MOSFET Minos MPF4N65 Featuring 650V Voltage and Low Gate Charge for Power Factor Correction
Key Attributes
Model Number:
MPF4N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.5pF
Number:
1 N-channel
Output Capacitance(Coss):
53pF
Input Capacitance(Ciss):
545pF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
MPF4N65
Package:
TO-220F
Product Description
Product Overview
The MPF4N65 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction (PFC). Key features include high voltage capability (VDS=650V), continuous drain current (ID=4A), low Crss, fast switching, and improved dv/dt capability.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Package: TO-220F
- Material: Silicon N-Channel
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Electronic Characteristics | VDS | VGS= 0V | 650 | V |
| ID | 4 | A | ||
| IDM | (note1) | 16 | A | |
| VGSS | ±20 | V | ||
| EAS | (note2) | 76 | mJ | |
| IAS | (note1) | 4 | A | |
| EAR | (note1) | 45 | mJ | |
| PD | (TC= 25ºC) | 20-25 | W | |
| Static Characteristics | V(BR)DSS | VGS= 0V, ID= 250µA | 650 | V |
| IDSS | VDS= 650V, VGS= 0V, TJ= 25ºC | -- | 1 µA | |
| IGSS | VGS= ±20V | -- | ±100 nA | |
| VGS(th) | VDS= VGS, ID = 250µA | 3.0-4.0 | V | |
| RDS(on) | (Note3) VGS= 10V, ID= 2A | 2-2.4 | Ω | |
| IS | TC = 25 ºC | -- | 4 A | |
| VSD | TJ = 25ºC, ISD = 2.0A, VGS= 0V | -- | 1.4 V | |
| trr | VGS= 0V,IS = 4A, diF/dt =100A /μs | -- | 550 ns | |
| Dynamic Characteristics | Ciss | VGS=0V, VDS= 25V, f = 1.0MHz | 545 | pF |
| Coss | 53 | pF | ||
| Crss | 4.5 | pF | ||
| Qg | VDD= 520V, ID= 4A, VGS= 10V | 15 | nC | |
| Switching Characteristics | td(on) | VDD= 250V, ID =4A, RG = 25 Ω | 36 | ns |
| tr | 13 | -- | ||
| td(off) | 80 | -- | ||
| tf | 24 | -- | ||
| Thermal Characteristics | RthJC | 6.25 | K/W | |
| RthJA | 62.5 | 60 K/W |
2410121956_Minos-MPF4N65_C2980272.pdf
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