Power Control Using Miracle Power MU4005X N Channel Enhancement Mode MOSFET With 40V Drain Source Voltage And Low RDS
Product Overview
The MU4005X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features 40V drain-source voltage, 50A continuous drain current, and a low typical on-resistance of 4.7m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, utilizing advanced trench technology and guaranteeing 100% EAS. It is suitable for applications such as load switches, PWM applications, and power management.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Advanced Trench Technology
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| General Features | |||||
| Drain-Source Voltage (VDS) | 40 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | |||
| Drain Current-Continuous (ID) @ TC = 25C | 50 | A | |||
| Drain Current-Continuous (ID) @ TC = 100C | 32 | A | |||
| Drain Current-Pulsed (IDM) | 200 | A | |||
| Maximum Power Dissipation (PD) @ TC = 25C | 39 | W | |||
| Single Pulsed Avalanche Energy (EAS) | 121 | mJ | |||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) | 3.2 | C/W | |||
| Thermal Resistance, Junction to Ambient (RJA) | 43 | C/W | |||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 40 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 40V, VGS = 0V | - | - | 1.0 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A | 1.0 | - | 2.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 30A | - | 4.7 | 6.1 | m |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 4.5V, ID = 20A | - | 6.6 | 8.6 | m |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | VDS = VGS = 0V, f = 1.0MHz | - | TBD | - | |
| Input Capacitance (Ciss) | VDS = 20V, VGS = 0V, f = 1.0MHz | - | 3031 | - | pF |
| Output Capacitance (Coss) | - | 213 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 179 | - | pF | |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 20V, VGS = 10V, ID = 30A, RGEN = 3.0 | - | 11 | - | ns |
| Turn-On Rise Time (tr) | - | 32 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 52 | - | ns | |
| Turn-Off Fall Time (tf) | - | 13 | - | ns | |
| Total Gate Charge (Qg) | VDS = 20V, VGS = 0 to 10V, ID = 30A | - | 59 | - | nC |
| Gate-Source Charge (Qgs) | - | 12 | - | - | |
| Gate-Drain Charge (Qgd) | - | 12 | - | - | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | VG = VD = 0V, Force Current | - | - | 50 | A |
| Maximum Pulsed Current (ISM) | - | - | 200 | A | |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Body Diode Reverse Recovery Time (Trr) | IF = 20A, dIF/dt = 100A/s | - | 13 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | IF = 20A, dIF/dt = 100A/s | - | 7 | - | nC |
| Package Information (PDFN33) | |||||
| Symbol | Min | Typ | Max | Unit | |
| A | 0.725 | 0.775 | 0.825 | mm | |
| B | 0.28 | 0.38 | 0.48 | mm | |
| C | 0.13 | 0.15 | 0.20 | mm | |
| D | 3.05 | 3.15 | 3.25 | mm | |
| D1 | 0.10 | mm | |||
| E | 3.25 | 3.35 | 3.45 | mm | |
| E1 | 3.0 | 3.1 | 3.2 | mm | |
| e | 0.60 | 0.65 | 0.70 | mm | |
| F | 0.25 | 0.30 | 0.35 | mm | |
| H | 1.63 | 1.73 | 1.83 | mm | |
| L | 2.35 | 2.45 | 2.55 | mm | |
2504151445_MIRACLE-POWER-MU4005X_C47361184.pdf
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