Power Control Using Miracle Power MU4005X N Channel Enhancement Mode MOSFET With 40V Drain Source Voltage And Low RDS

Key Attributes
Model Number: MU4005X
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
RDS(on):
6.1mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
179pF
Output Capacitance(Coss):
213pF
Input Capacitance(Ciss):
3.031nF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
59nC@10V
Mfr. Part #:
MU4005X
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The MU4005X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features 40V drain-source voltage, 50A continuous drain current, and a low typical on-resistance of 4.7m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, utilizing advanced trench technology and guaranteeing 100% EAS. It is suitable for applications such as load switches, PWM applications, and power management.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Advanced Trench Technology

Technical Specifications

Parameter Condition Min. Typ. Max. Unit
General Features
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) 20 V
Drain Current-Continuous (ID) @ TC = 25C 50 A
Drain Current-Continuous (ID) @ TC = 100C 32 A
Drain Current-Pulsed (IDM) 200 A
Maximum Power Dissipation (PD) @ TC = 25C 39 W
Single Pulsed Avalanche Energy (EAS) 121 mJ
Operating and Storage Temperature Range (TJ, TSTG) -55 150 C
Thermal Characteristics
Thermal Resistance, Junction to Case (RJC) 3.2 C/W
Thermal Resistance, Junction to Ambient (RJA) 43 C/W
Off Characteristics
Drain-Source Breakdown Voltage (BVDSS) VGS = 0V, ID = 250A 40 - - V
Zero Gate Voltage Drain Current (IDSS) VDS = 40V, VGS = 0V - - 1.0 A
Forward Gate Body Leakage Current (IGSS) VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
Gate Threshold Voltage (VGS(th)) VDS = VGS, ID = 250A 1.0 - 2.5 V
Static Drain-Source On-Resistance (RDS(on)) VGS = 10V, ID = 30A - 4.7 6.1 m
Static Drain-Source On-Resistance (RDS(on)) VGS = 4.5V, ID = 20A - 6.6 8.6 m
Dynamic Characteristics
Gate Resistance (RG) VDS = VGS = 0V, f = 1.0MHz - TBD -
Input Capacitance (Ciss) VDS = 20V, VGS = 0V, f = 1.0MHz - 3031 - pF
Output Capacitance (Coss) - 213 - pF
Reverse Transfer Capacitance (Crss) - 179 - pF
Switching Characteristics
Turn-On Delay Time (td(on)) VDD = 20V, VGS = 10V, ID = 30A, RGEN = 3.0 - 11 - ns
Turn-On Rise Time (tr) - 32 - ns
Turn-Off Delay Time (td(off)) - 52 - ns
Turn-Off Fall Time (tf) - 13 - ns
Total Gate Charge (Qg) VDS = 20V, VGS = 0 to 10V, ID = 30A - 59 - nC
Gate-Source Charge (Qgs) - 12 - -
Gate-Drain Charge (Qgd) - 12 - -
Drain-Source Diode Characteristics
Drain-Source Diode Forward Continuous Current (IS) VG = VD = 0V, Force Current - - 50 A
Maximum Pulsed Current (ISM) - - 200 A
Drain-Source Diode Forward Voltage (VSD) VGS = 0V, IS = 30A - - 1.2 V
Body Diode Reverse Recovery Time (Trr) IF = 20A, dIF/dt = 100A/s - 13 - ns
Body Diode Reverse Recovery Charge (Qrr) IF = 20A, dIF/dt = 100A/s - 7 - nC
Package Information (PDFN33)
Symbol Min Typ Max Unit
A 0.725 0.775 0.825 mm
B 0.28 0.38 0.48 mm
C 0.13 0.15 0.20 mm
D 3.05 3.15 3.25 mm
D1 0.10 mm
E 3.25 3.35 3.45 mm
E1 3.0 3.1 3.2 mm
e 0.60 0.65 0.70 mm
F 0.25 0.30 0.35 mm
H 1.63 1.73 1.83 mm
L 2.35 2.45 2.55 mm

2504151445_MIRACLE-POWER-MU4005X_C47361184.pdf

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