High Voltage N Channel MOSFET MIRACLE POWER MJD07N65 with CRM Super Junction Technology and Low RDS
Key Attributes
Model Number:
MJD07N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
650mΩ@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Input Capacitance(Ciss):
382pF
Pd - Power Dissipation:
75W
Output Capacitance(Coss):
29pF
Gate Charge(Qg):
12.5nC@10V
Mfr. Part #:
MJD07N65
Package:
TO-252
Product Description
Product Overview
The MJD07N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring CRM(CQ) Super_Junction technology. It offers superior performance with low RDS(ON) for on-state efficiency and a low FOM for fast switching efficiency. This MOSFET is designed for applications including chargers, power supplies, LED/LCD/PDP TV and monitor lighting, and solar/renewable/UPS-micro inverter systems.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: CRM(CQ) Super_Junction
- Channel Type: N-Channel
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| General Features | |||||
| Voltage | 650 | V | |||
| Current | 7 | A | |||
| RDS(ON) | VGS = 10V | 0.58 | 0.65 | ||
| Absolute Maximum Ratings | |||||
| VDS | 650 | V | |||
| VGS | 30 | V | |||
| ID (Continuous, TC=25C) | 7 | A | |||
| ID (Continuous, TC=100C) | 5 | A | |||
| IDM (Pulsed) | 28 | A | |||
| PD (Max Power Dissipation @ TJ=25C) | 75 | W | |||
| EAS (Single Pulsed Avalanche Energy) | 245 | mJ | |||
| TJ, TSTG (Operating and Store Temperature Range) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| R JC (Thermal Resistance, Junction-Case) | Max. | 1.66 | C/W | ||
| R JA (Thermal Resistance Junction-Ambient) | Max. | 133 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS (Zero Gate Voltage Drain Current) | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS (Forward Gate Body Leakage Current) | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | |||||
| VGS(th) (Gate Threshold Voltage) | VDS=VGS, ID =250A | 2.5 | - | 4.5 | V |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = 10V, ID =3.5A | - | 0.58 | 0.65 | |
| Dynamic Characteristics | |||||
| Ciss (Input Capacitance) | VDS = 100V, VGS = 0V, f = 1.0MHz | - | 382 | - | pF |
| Coss (Output Capacitance) | - | 29 | - | pF | |
| Crss (Reverse Transfer Capacitance) | - | 24 | - | pF | |
| Switching Characteristics | |||||
| td(on) (Turn-On Delay Time) | VDD = 400V, ID =3.5A, RG =25,VGS=10V | - | 7.4 | - | ns |
| tr (Turn-On Rise Time) | - | 9.4 | - | ns | |
| td(off) (Turn-Off Delay Time) | - | 48 | - | ns | |
| tf (Turn-Off Fall Time) | - | 7.5 | - | ns | |
| Qg (Total Gate Charge) | VDS=480V,ID=3.5A, VGS=10Vf =1MHz | - | 12.5 | - | nC |
| Qgs (Gate-Source Charge) | - | 2.7 | - | nC | |
| Qgd (Gate-Drain Charge) | - | 5.2 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| VSD (Drain-Source Diode Forward Voltage) | VGS = 0V, IS = 3.5A | - | 0.85 | 1.2 | V |
| Trr (Body Diode Reverse Recovery Time) | di/dt=100A/us. IS=3.5A | - | 189 | - | ns |
| Qrr (Reverse Recovery Charge) | - | 1500 | - | nC | |
2410122025_MIRACLE-POWER-MJD07N65_C17702003.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
