Low On Resistance N Channel Power MOSFET MIRACLE POWER MPD05N50B 500V 5A for Switching Applications
Product Overview
The MPD05N50B is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This component features a 500V drain-source voltage, a continuous drain current of 5A at 25C, and a low on-resistance of 2.0 typ. at VGS = 10V. It is designed for fast switching applications and is 100% avalanche tested. Key applications include adaptors, standby power supplies, switching power supplies, and LED power solutions.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, On-Resistance | VGS = 10V | 2.0 | ||||
| 500 | V | |||||
| TC = 25C | 5 | A | ||||
| Low Crss | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Applications | ||||||
| Adaptor | ||||||
| Standby Power | ||||||
| Switching power supply | ||||||
| LED Power | ||||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 500 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 5 | A | |||
| ID | Drain Current-Continuous, TC =100C | 3.2 | A | |||
| IDM | Drain Current-Pulsed | b | 20 | A | ||
| PD | Maximum Power Dissipation @ TJ =25C | 98 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | c | 5 | V/ns | ||
| EAS | Single Pulsed Avalanche Energy | d | 125 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.27 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 60 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 500 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 500V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | 3.1 | 4 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID =2.5A | - | 2.0 | 2.5 | |
| gfs | Forward Transconductance | VDS=15V, ID=2.5A | - | 3.9 | - | S |
| Dynamic Characteristics | ||||||
| Rg | Gate Resistance | f = 1.0MHz | - | 2.1 | - | |
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 503 | - | pF |
| Coss | Output Capacitance | - | 41 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 2.3 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 250V, ID =5A, VGS=10V,Rg=10 | - | 8 | - | ns |
| tr | Turn-On Rise Time | - | 22 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 17 | - | ns | |
| tf | Turn-Off Fall Time | - | 22 | - | ns | |
| Qg | Total Gate Charge | VDS = 400V, ID =5A, VGS = 10V | - | 10.7 | - | nC |
| Qgs | Gate-Source Charge | - | 3.9 | - | nC | |
| Qgd | Gate-Drain Charge | - | 2.4 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 5 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 20 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 5A | - | 0.86 | 1.15 | V |
| Trr | Body Diode Reverse Recovery Time | IS=5A,VGS = 0V dIF/dt=100A/us | - | 315 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | 1236 | - | nC | |
2410122015_MIRACLE-POWER-MPD05N50B_C17701966.pdf
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