Low On Resistance N Channel Power MOSFET MIRACLE POWER MPD05N50B 500V 5A for Switching Applications

Key Attributes
Model Number: MPD05N50B
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-
RDS(on):
2.5Ω@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
2.3pF
Number:
1 N-channel
Input Capacitance(Ciss):
503pF
Output Capacitance(Coss):
41pF
Pd - Power Dissipation:
98W
Gate Charge(Qg):
10.7nC@10V
Mfr. Part #:
MPD05N50B
Package:
TO-252
Product Description

Product Overview

The MPD05N50B is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This component features a 500V drain-source voltage, a continuous drain current of 5A at 25C, and a low on-resistance of 2.0 typ. at VGS = 10V. It is designed for fast switching applications and is 100% avalanche tested. Key applications include adaptors, standby power supplies, switching power supplies, and LED power solutions.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Power MOSFET

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, On-Resistance VGS = 10V 2.0
500 V
TC = 25C 5 A
Low Crss
Fast Switching
100% Avalanche Tested
Applications
Adaptor
Standby Power
Switching power supply
LED Power
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted 500 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous, TC =25C 5 A
ID Drain Current-Continuous, TC =100C 3.2 A
IDM Drain Current-Pulsed b 20 A
PD Maximum Power Dissipation @ TJ =25C 98 W
dv/dt Peak Diode Recovery dv/dt c 5 V/ns
EAS Single Pulsed Avalanche Energy d 125 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 1.27 C/W
RJA Thermal Resistance, Junction to Ambient 60 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 500 - - V
IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 2 3.1 4 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID =2.5A - 2.0 2.5
gfs Forward Transconductance VDS=15V, ID=2.5A - 3.9 - S
Dynamic Characteristics
Rg Gate Resistance f = 1.0MHz - 2.1 -
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 503 - pF
Coss Output Capacitance - 41 - pF
Crss Reverse Transfer Capacitance - 2.3 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 250V, ID =5A, VGS=10V,Rg=10 - 8 - ns
tr Turn-On Rise Time - 22 - ns
td(off) Turn-Off Delay Time - 17 - ns
tf Turn-Off Fall Time - 22 - ns
Qg Total Gate Charge VDS = 400V, ID =5A, VGS = 10V - 10.7 - nC
Qgs Gate-Source Charge - 3.9 - nC
Qgd Gate-Drain Charge - 2.4 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 5 A
ISM Maximum Pulsed Current VGS = 0V - - 20 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 5A - 0.86 1.15 V
Trr Body Diode Reverse Recovery Time IS=5A,VGS = 0V dIF/dt=100A/us - 315 - ns
Qrr Body Diode Reverse Recovery Charge - 1236 - nC

2410122015_MIRACLE-POWER-MPD05N50B_C17701966.pdf

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