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quality N Channel Enhancement Mode MOSFET MIRACLE POWER MU3020Y 30V 130A Drain Current Power Applications factory
quality N Channel Enhancement Mode MOSFET MIRACLE POWER MU3020Y 30V 130A Drain Current Power Applications factory

N Channel Enhancement Mode MOSFET MIRACLE POWER MU3020Y 30V 130A Drain Current Power Applications

Key Attributes
Model Number: MU3020Y
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
130A
RDS(on):
1.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
532pF
Input Capacitance(Ciss):
6.278nF
Output Capacitance(Coss):
863pF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
108nC@10V
Mfr. Part #:
MU3020Y
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The MU3020Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features 30V drain-source voltage, 130A continuous drain current, and a low on-resistance of 1.5m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for load switch, PWM, and power management applications. It is halogen-free and RoHS-compliant, with 100% EAS guaranteed.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: N-Channel Enhancement Mode MOSFET
  • Compliance: Halogen-free; RoHS-compliant
  • Testing: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ±20 V
ID Drain Current-Continuous (TC = 25°C) 130 A
ID Drain Current-Continuous (TC = 100°C) 82 A
IDM Drain Current-Pulsed 520 A
PD Maximum Power Dissipation (TC = 25°C) 125 W
EAS Single Pulsed Avalanche Energy 484 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 1.0 °C/W
RθJA Thermal Resistance, Junction to Ambient 35 °C/W
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V - - 1.0 μA
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = ±20V - - ±100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 1.0 1.5 2.5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 30A - 1.5 1.9 mΩ
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 20A - 2.0 2.5 mΩ
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 2.1 - Ω
Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz - 6278 - pF
Coss Output Capacitance - 863 - pF
Crss Reverse Transfer Capacitance - 532 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3.0Ω - 13 - ns
tr Turn-On Rise Time - 29 - ns
td(off) Turn-Off Delay Time - 85 - ns
tf Turn-Off Fall Time - 50 - ns
Qg Total Gate Charge VDS = 15V, VGS = 0 to 10V, ID = 20A - 108 - nC
Qgs Gate-Source Charge - 20 - -
Qgd Gate-Drain Charge - 20 - -
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 130 A
ISM Maximum Pulsed Current - - 520 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/μs - 28 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/μs - 16 - nC

2504151445_MIRACLE-POWER-MU3020Y_C47361174.pdf

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