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quality High Current N Channel MOSFET MIRACLE POWER MS8003L with Low Gate Charge and 383 Amp Continuous Drain Current factory
quality High Current N Channel MOSFET MIRACLE POWER MS8003L with Low Gate Charge and 383 Amp Continuous Drain Current factory

High Current N Channel MOSFET MIRACLE POWER MS8003L with Low Gate Charge and 383 Amp Continuous Drain Current

Key Attributes
Model Number: MS8003L
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
383A
RDS(on):
1.3mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Input Capacitance(Ciss):
13.65nF
Pd - Power Dissipation:
357W
Gate Charge(Qg):
200nC@10V
Mfr. Part #:
MS8003L
Package:
TOLL-8
Product Description

Product Overview

The MS8003L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Miracle Technology. It features a robust 80V drain-source voltage and a continuous drain current of 383A at 25C, with a low on-resistance (RDS(on)) of 1.0m typ. at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for load switch, PWM applications, and power management. It is halogen-free and RoHS-compliant, with 100% EAS guaranteed.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Miracle Technology
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Compliance: Halogen-free; RoHS-compliant
  • Testing: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 80 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous (TC = 25C) 383 A
ID Drain Current-Continuous (TC = 100C) 242 A
IDM Drain Current-Pulsed 1530 A
PD Maximum Power Dissipation (TC = 25C) 357 W
EAS Single Pulsed Avalanche Energy 2048 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.35 C/W
RJA Thermal Resistance, Junction to Ambient 35 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 80 - - V
IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.0 - 4.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 20A - 1.0 1.3 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 3.1 -
Ciss Input Capacitance VDS = 40V, VGS = 0V, f = 1.0MHz - 13.65 - nF
Coss Output Capacitance - 4421 - pF
Crss Reverse Transfer Capacitance - 110 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 40V, VGS = 10V, ID = 20A, RGEN = 3.0 - 33 - ns
tr Turn-On Rise Time - 54 - ns
td(off) Turn-Off Delay Time - 138 - ns
tf Turn-Off Fall Time - 73 - ns
Qg Total Gate Charge VDS = 40V, VGS = 0 to 10V, ID = 20A - 200 - nC
Qgs Gate-Source Charge - 68 - nC
Qgd Gate-Drain Charge - 41 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 383 A
ISM Maximum Pulsed Current - - 1530 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A - 0.7 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 115 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 331 - nC

Notes:
a. TJ = +25 to +150 .
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. L = 1mH, VDD = 60V, IAS = 64A, RG = 25 Starting TJ = 25 .
d. Pulse width 300s; duty cycle 2%.


2504151445_MIRACLE-POWER-MS8003L_C47361196.pdf

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