86--136 6733 2386
quality thyristor phase control MSKSEMI LLDB4 for lamp dimming motor speed and heat control electronic devices factory
quality thyristor phase control MSKSEMI LLDB4 for lamp dimming motor speed and heat control electronic devices factory

thyristor phase control MSKSEMI LLDB4 for lamp dimming motor speed and heat control electronic devices

Key Attributes
Model Number: LLDB4
Product Custom Attributes
Breakover Voltage VBO(Range Value):
35V~45V
Breakover Current (Ibo):
50uA
Repetitive Peak On-state Current (Itrm):
2A
Rise Time(tr):
2us
Dynamic Breakover Voltage:
5V
Breakover Voltage Symmetry:
3V
Leak Current:
10uA
Breakover Voltage VBO(Typ):
-
Mfr. Part #:
LLDB4
Package:
LL-34
Product Description

Product Overview

LLDB3/LLDB4 DIACs are designed for thyristor phase control applications, including lamp dimming, universal motor speed controls, and heat controls. They offer reliable performance in various control circuits.

Product Attributes

  • Brand: MSKSEMI
  • Part Number Prefix: LLDB3/LLDB4
  • Package: LL-34
  • Quantity per Reel: 2500

Technical Specifications

ParameterSymbolLLDB3 (Unit)LLDB4 (Unit)Min.Max.
Power Dissipation (Ta = 65 °C)Ptot150 mW
Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz)ITRM2 A
Operating Junction and Storage Temperature RangeTj, Tstg - 40 to + 125 °C
Breakover Voltage at C = 22 nFVBO28 V35 V36 V45 V
Breakover Voltage Symmetry at C = 22 nF[|+VBO|-|-VBO|]3 V
Dynamic Breakover Voltage at ΔI = [IBO to IF = 10 mA]|ΔV ±|5 V
Output VoltageVO5 V
Breakover Current at C = 22 nFIBO50 µA
Leakage Current at VB = 0.5 VBO maxIB10 µA
Rise Timetr2 µs

2403072200_MSKSEMI-LLDB4_C5359965.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion factory
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
quality Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits factory
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
quality Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications factory
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
quality Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS factory
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.