150V N Channel MOSFET with 200A Continuous Drain Current and Halogen Free Design MIRACLE POWER MSE003C
Key Attributes
Model Number:
MSE003C
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
200A
RDS(on):
4.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Pd - Power Dissipation:
250W
Gate Charge(Qg):
122nC@10V
Mfr. Part #:
MSE003C
Package:
TO-220
Product Description
Product Overview
The MSE003C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This high-performance MOSFET offers a 150V breakdown voltage and a continuous drain current of 200A, with a typical RDS(on) of 3.8m at VGS = 10V. It features excellent RDS(on) and low gate charge, making it suitable for applications requiring high efficiency and speed. The device is Halogen-free and RoHS-compliant, with 100% EAS guaranteed. Ideal for Uninterruptible Power Supplies, High Speed Power Supplies, Hard Switched and High Frequency Circuits, and High Efficiency Synchronous Rectification in SMPS.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: N-Channel Enhancement Mode MOSFET
- Compliance: Halogen-free; RoHS-compliant
- Testing: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 150 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 200 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | 126 | A | |||
| IDM | Drain Current-Pulsed | 798 | A | |||
| PD | Maximum Power Dissipation (TC = 25C) | 250 | W | |||
| EAS | Single Pulsed Avalanche Energy | 1600 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.5 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 69 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 150 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 150V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.0 | 3.2 | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | - | 3.8 | 4.6 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 8537 | - | pF |
| Coss | Output Capacitance | - | 783 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 20 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 75V, VGS = 10V, ID = 20A, RGEN = 2.7 | - | 26 | - | ns |
| tr | Turn-On Rise Time | - | 51 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 101 | - | ns | |
| tf | Turn-Off Fall Time | - | 52 | - | ns | |
| Qg | Total Gate Charge | VDS = 75V, VGS = 0 to 10V, ID = 20A | - | 122 | - | nC |
| Qgs | Gate-Source Charge | - | 42 | - | nC | |
| Qgd | Gate-Drain Charge | - | 28 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 200 | A |
| ISM | Maximum Pulsed Current | - | - | 798 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 20A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 116 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 462 | - | nC |
2504151445_MIRACLE-POWER-MSE003C_C47361114.pdf
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