Load Switching N Channel Enhancement Mode MOSFET with 30V Drain Source Voltage MIRACLE POWER MU3019Y
Key Attributes
Model Number:
MU3019Y
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
140A
RDS(on):
2.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
502pF
Pd - Power Dissipation:
48W
Input Capacitance(Ciss):
5.7nF
Output Capacitance(Coss):
528pF
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
MU3019Y
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The MU3019Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced Trench Technology. It offers a 30V drain-source voltage and a continuous drain current of 140A at 25C. Key benefits include fast switching, excellent RDS(ON) performance, and low gate charge, with a typical RDS(ON) of 1.6m at VGS = 10V. This MOSFET is 100% EAS Guaranteed and is suitable for applications such as load switching, PWM applications, and power management.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Trench Technology
- Channel Type: N-Channel Enhancement Mode
- EAS Guarantee: 100% EAS Guaranteed
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 30 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | |||
| Drain Current-Continuous (ID) @ TC = 25°C | 140 | A | |||
| Drain Current-Continuous (ID) @ TC = 100°C | 82 | A | |||
| Drain Current-Pulsed (IDM) | 360 | A | |||
| Maximum Power Dissipation (PD) @ TC = 25°C | 48 | W | |||
| Single Pulsed Avalanche Energy (EAS) | 529 | mJ | |||
| Operating and Store Temperature Range (TJ, TSTG) | -55 | 150 | °C | ||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RθJC) | 2.6 | °C/W | |||
| Thermal Resistance, Junction to Ambient (RθJA) | 49 | °C/W | |||
| Electrical Characteristics | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250μA | 30 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 30V, VGS = 0V | - | - | 1.0 | μA |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250μA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 20A | - | 1.6 | 2.2 | mΩ |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 4.5V, ID = 10A | - | 2.3 | 3.0 | mΩ |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 5700 | - | pF |
| Output Capacitance (Coss) | - | 528 | - | pF | |
| Reverse Transfer Capacitance (Crss) | - | 502 | - | pF | |
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDS = 15V, VGS = 10V, ID = 30A, RG = 3.3Ω | - | 10 | - | ns |
| Turn-On Rise Time (tr) | - | 11 | - | ns | |
| Turn-Off Delay Time (td(off)) | - | 76 | - | ns | |
| Turn-Off Fall Time (tf) | - | 28 | - | ns | |
| Total Gate Charge (Qg) | VDS = 15V, VGS = 10V, ID = 40A | - | 110 | - | nC |
| Gate-Source Charge (Qgs) | - | 21 | - | nC | |
| Gate-Drain Charge (Qgd) | - | 25 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | VG = VD = 0V, Force Current | - | - | 140 | A |
| Maximum Pulsed Current (ISM) | - | - | 360 | A | |
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IS = 20A | - | - | 1.2 | V |
| Body Diode Reverse Recovery Time (Trr) | IF = 30A, di/dt = 100A/μs | - | 22 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | IF = 30A, di/dt = 100A/μs | - | 13 | - | nC |
2504151445_MIRACLE-POWER-MU3019Y_C47361172.pdf
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